A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A display apparatus may include a display panel configured to display an image, a plate disposed on a rear surface of the display panel, a heat dissipation member disposed on a rear surface of the plate and having a first hole, and an adhesive member disposed between the plate and the heat dissipation member and having a second hole. The heat dissipation member may include a body part and a pattern part.

A display device includes a first substrate having a first surface and a plurality of LED elements mounted on the first surface of the first substrate. Each of the plurality of LED elements includes a main body portion having a second surface facing the first surface of the first substrate and a third surface on a side opposite to the second surface, an anode electrode and a cathode electrode provided on the second surface of the main body portion, and an organic film bonded to the third surface of the main body portion. The organic film has a fourth surface facing and bonded to the third surface and a fifth surface on a side opposite to the fourth surface. The fifth surface of the organic film has a plurality of depressions.

The present inventive concept relates to an RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures, and a manufacturing method thereof. The RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures includes an n-type contact electrode layer, a first light-emitting structure, a common electrode layer, a second light-emitting structure, a tunnel junction layer, and a third light-emitting structure, which are sequentially stacked on a substrate. The RGB micro-light-emitting diode with a reduced unit area can be easily manufactured by forming the corner mesa contact structure on each of the n-type contact electrode layers by etching the vertically-stacked structure, forming contact structures on the n-type contact electrode layers, followed by electrical connection.

In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV/cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN/GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.