A method of manufacturing a semiconductor device package includes disposing at least one die over a substrate, dispensing a liquid material on the die, and curing the liquid material so that the liquid material forms a protective layer attached to a portion of the die. The method further includes forming an encapsulant covering at least a portion of the substrate and a portion of the die, where the protective layer is exposed from the encapsulant in a cavity defined by the encapsulant. The method further includes removing the protective layer from the die, and disposing a cap over the cavity.

A lead frame includes at least one row of a plurality of unit regions arranged in a first direction. Each of the unit regions includes: a first lead; a second lead; and an isolation region configured to isolate the first lead from the second lead, the isolation region including a bent portion that is located at an end part of the second lead. The first lead has an extending portion extending along the end part of the second lead. The plurality of unit regions includes a first unit region, and a second unit region that is adjacent to the first unit region in the first direction. The first lead of the first unit region is connected to the first lead or second lead of the second unit region via the extending portion.

The invention relates to the use of a hybrid material comprising a) an organopolysilazane material and b) at least one surface-modified nanoscale inorganic oxide as coating material for producing transparent layers having a thickness of less than 500 m in optoelectronic components.

A resin dispensing apparatus includes a supply unit including a syringe having an internal space configured to hold a phosphor-containing resin. An agitator is disposed in the internal space. The supply unit is configured to rotate at least one of the syringe and the agitator to prevent settling of phosphor contained in the phosphor-containing resin. A discharge unit includes a cylinder having a discharge nozzle through which the phosphor-containing resin, received through a connecting pipe connected to the syringe, is discharged. A piston provides pressure to discharge the phosphor-containing resin through the discharge nozzle inside the cylinder.

A method of manufacturing a light-emitting device according to an aspect of the present disclosure includes: providing a light-emitting device intermediate including a light-emitting element and a covering member intermediate that contains a light reflective material and an alkali metal silicate and covers the light-emitting element; and immersing the covering member intermediate in an aqueous solution containing an alkaline earth metal halide salt to form a covering member containing an alkaline earth metal silicate.

According to an embodiment of the disclosure, a display device may include a substrate where a display area and a non-display area are defined, the non-display area including a pad area, a display part disposed on the substrate and displaying an image, a pad part disposed in the pad area and including a plurality of pads, a dam positioned between the pad part and the display part and surrounding at least one side of the display part, and a filling layer disposed on the display part surrounded by the dam to cover the display part. The filling layer may include a transparent curable resin and is positioned in an uppermost layer in the display area.

A display device includes a lower substrate comprising at least one light-emitting diode (LED) light source, an upper substrate comprising at least one quantum dot color filter, and a bonding layer configured to bond the lower substrate and the upper substrate. The upper substrate may include a partition wall structure including least one sub-rod is repeatedly provided in an edge area of a partition wall layer.

A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

A light emitting diode (LED) packaging structure including a metal pad, an electric static discharge (ESD) protection element and an LED chip is provided. The metal pad has a first pad portion having a first top surface with a first concave configured thereon and a second pad portion having a second top surface with a second concave configured thereon. The ESD protection element has two first electrode portions respectively configured in the first concave and the second concave. The LED chip is located above the ESD protection element and has two second electrode portions respectively configured on the first top surface and the second top surface. A frame and a light emitting device having the frame that both include the above LED packaging structure are described herein. A light emitting device having an omni-directional light emitting effect is also described and includes the above LED packaging structure.

Various optoelectronic modules are described and include one or more optoelectronic devices. Each optoelectronic module includes one or more optoelectronic devices. Sidewalls laterally surround each optoelectronic device and can be in direct contact with sides of the optoelectronic device or, in some cases, with an overmold surrounding the optoelectronic device. The sidewalls can be composed, for example, of a vacuum injected material that is non-transparent to light emitted by or detectable by the optoelectronic device. The module also includes a passive optical element. Depending on the implementation, the passive optical element can be on a cover for the module, directly on a top surface of the optoelectronic device, or on an overmold surrounding the optoelectronic device. Methods of fabricating such modules are described as well, and can facilitate manufacturing the modules using wafer-level processes.