A package substrate machining method is provided. The package substrate includes a ceramic substrate, a plurality of device chips arranged on one face of the ceramic substrate, and a coating layer made of a resin that covers the entire one face of the ceramic substrate. The package substrate machining method includes a first laser-machined groove formation step adapted to form, in the coating layer, first laser-machined grooves along scheduled division lines set up on the package substrate by irradiating a laser beam at a wavelength absorbable by the coating layer from the coating layer side of the package substrate; and a second laser-machined groove formation step adapted to form, in the ceramic substrate and after the first laser-machined groove formation step, second laser-machined grooves along the scheduled division lines by irradiating a laser beam from the ceramic substrate side of the package substrate.

Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

A light-emitting device includes a first light-emitting element, a phosphor, and a second light-emitting element having a peak wavelength between peak wavelengths of two peaks that define a deepest dip in a composite emission spectrum of the first light-emitting element and the phosphor.

The light emitting device includes the cap including the ultraviolet light transmitting part made of glass for transmitting ultraviolet light. In the light emitting device, the first electrode of the ultraviolet light emitting element and the first conductor of the mounting substrate are bonded with the first bond made of AuSn, the second electrode of the ultraviolet light emitting element and the second conductor of the mounting substrate are bonded with the second bond made of AuSn, and the first bonding metal layer of the mounting substrate and the second bonding metal layer of the cap are bonded with the third bond made of AuSn.

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

A light emitting device includes a substrate; a first frame located on the substrate; a second frame located on the substrate, the second frame being located inward of and spaced apart from the first frame; at least one first light emitting element located on the substrate in a first region located between the first frame and the second frame; at least one second light emitting element located on the substrate in a second region located inward of the second frame; and a sealing member covering the at least one first light emitting element and the at least one second light emitting element. The second frame includes a light-transmissive portion. A highest portion of the second frame is higher than a highest portion of the first frame.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1:

##STR00001##

a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2:

##STR00002## wherein in Chemical Formulae 1 and 2 groups R.sup.2, R.sub.a to R.sub.d, Y.sub.a to Y.sub.d, L.sub.1 and L.sub.2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.