H10H20/0362

Method of detaching sealing member of light emitting device
09755121 · 2017-09-05 · ·

A method of detaching a sealing member of a light emitting device which has a substrate, alight emitting element mounted on the substrate and a sealing member that seals the light emitting element, wherein a release layer and/or an air layer is/are provided between the substrate and the sealing member; and the sealing member is detached from the substrate at the release layer and/or the air layer.

Method for producing a plurality of optoelectronic components and optoelectronic component

The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: providing an auxiliary support wafer (1) having contact structures (4), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, applying a plurality of radiation-emitting semiconductor bodies (5) to the contact structures (4), encapsulating an least the contact structures (4) with a potting mass (10), and removing the auxiliary support wafer (1). The invention further relates to an optoelectronic component.

Light emitting device and method of manufacturing light emitting device

A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.

Calibration of layer thickness and ink volume in fabrication of encapsulation layer for light emitting device
09755186 · 2017-09-05 · ·

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

Method for producing light emitting device
09755105 · 2017-09-05 · ·

A method for producing a light emitting device includes providing a light emitting device array including a collective substrate, a plurality of light emitting elements, a covering member covering a region surrounding the plurality of light emitting elements, in which the plurality of light emitting elements and the covering member are arranged on an upper surface of the collective substrate, the collective substrate including a ceramic base member, and the covering member containing a silicone-based resin as a base material; making a cut into the covering member such that the cut has a depth such that an uncut portion remains in the covering member in a direction of the depth' and push-splitting the collective substrate, and splitting the uncut portion of the covering member after the making the cut into the covering member.

SEMICONDUCTOR LIGHT EMITTING DEVICE
20170250307 · 2017-08-31 · ·

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

Electronic Arrangement
20170243850 · 2017-08-24 ·

An electronic arrangement comprising: a carrier; at least one connecting area on the carrier; at least one electronic component, which is fixed at least on the connecting area by a contact material; a covering area, which surrounds the connecting area on the carrier; and at least one covered region covered by a covering material; wherein the covering area is highly reflective with a reflectivity of greater than 70%, exposed regions on the connecting area and on the contact material are covered with the covering material, and the covering material is colored by titanium dioxide particles in such a way that the titanium dioxide particles are provided in the covering material in a proportion between 25 percent and 70 percent by weight, such that the covering material is highly reflective with a reflectivity of greater than 70% to minimize optical contrast between the covering area and the covered region.

SUBSTRATE FREE LED PACKAGE
20170244008 · 2017-08-24 ·

A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies.

Lens for light-emitting device and method of manufacturing light-emitting device package

Disclosed are a lens for a light-emitting device usable in a display apparatus or a lighting apparatus, and a method of manufacturing a light-emitting device package. The lens may include a lens body including a light-receiving portion provided in a lower surface of the lens body, a light-emitting portion provided on an upper surface of the lens body, and a recess provided at a center of the upper surface of the lens body, and a flat portion provided in a horizontal shape on a bottom surface of the recess perpendicularly to a main emission line of light emitted from a light-emitting device to emit at least a part of light received through the light-receiving portion, upward. A diameter of the flat portion may be 1/100 to 1/10 of an inlet diameter of the light-receiving portion.

LIGHT EMITTING APPARATUS, ILLUMINATION APPARATUS AND DISPLAY APPARATUS
20170236806 · 2017-08-17 ·

A light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.