A light source device includes: a mounting board; a plurality of light-emitting parts disposed on the mounting board, each of the plurality of light-emitting parts being configured to be individually turned on; a light-shielding member defining an opening; and a light-guide member supported by the light-shielding member, the light-guide member comprising a Fresnel lens portion, wherein, in a top view, the Fresnel lens portion is located within an area of the opening of the light-shielding member. In the top view, irradiation areas of the respective light-emitting parts are at least partially separated from each other.

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material covering a plurality of lateral surfaces; and a reflecting layer, formed on the wavelength converting material which is arranged on the top surface.

A light emitting device includes a substrate; a first frame located on the substrate; a second frame located on the substrate, the second frame being located inward of and spaced apart from the first frame; at least one first light emitting element located on the substrate in a first region located between the first frame and the second frame; at least one second light emitting element located on the substrate in a second region located inward of the second frame; and a sealing member covering the at least one first light emitting element and the at least one second light emitting element. The second frame includes a light-transmissive portion. A highest portion of the second frame is higher than a highest portion of the first frame.

A light emitting device is provided. The light emitting device includes a substrate and a plurality of light emitting elements disposed on a major surface of the substrate. The substrate includes a reflector recessed in the major surface and surrounding at least a portion of the plurality of light emitting elements.

A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

A light emitting device includes a substrate, a light emitting element and a sealing resin member. The substrate includes a flexible base, a plurality of wiring portions and a groove portion. The groove portion is formed between the plurality of wiring portions spaced apart from each other, and includes a first groove portion, a second groove portion, and a third groove portion extending in a direction intersecting the first and second groove portions. The first and third groove portions are connected to each other with a curve. The second and third groove portions are connected to each other with a curve. The sealing resin member seals the light emitting element and the substrate. The sealing resin member is arranged on the third groove portion and spaced apart from the first groove portion and the second groove portion.

A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.