This disclosure is directed to devices, integrated circuits, and methods for sensing radiation. In one example, a device includes an oscillator, configured to deliver a signal via an output at intervals defined by an oscillation frequency, and a counter, connected to the output of the oscillator and configured to count a number of times the comparator delivers the output signal. The oscillator includes a radiation-sensitive cell that applies a resistance. The resistance of the radiation-sensitive cell is configured to vary in response to incident radiation, wherein the oscillation frequency varies based at least in part on the resistance of the radiation-sensitive cell.

A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

A radiation detector (10) includes a semiconductor element (1) for generating positive holes and electrons, a cathode (2) formed on a first surface of the semiconductor element (1) and a plurality of segmented anodes (3) formed on a second surface of the semiconductor element (1), the second surface being in opposed relation to the first surface. Additionally, a plurality of segmented steering electrodes (5a) are positioned adjacent the plurality of segmented anodes (3). Moreover, a plurality of doping atoms are located above at least a portion of the plurality of segmented anodes (3) for reducing the voltage difference between the plurality of segmented anodes (3) and the plurality of segmented steering electrodes (5a).

An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

A particle detector having a support member. A front electrode layer is disposed over the support member. A semiconductor junction having at least an n-type layer and at least a p-type layer is disposed over the front electrode layer. A back electrode layer is disposed over the semiconductor junction. The back electrode layer has a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction.

Provided herein is a digital x-ray detector wherein a plurality of sensing pixels are formed in a matrix structure, and wherein a pin structure positioned in an odd number line and a pin structure positioned in an even number line are not formed in the same process, thereby preventing a line detect by a particle.

A device includes a detector, a sensing pad, a ring structure, a control circuit, a first transistor, and a second transistor. The sensing pad is electrically connected to the detector. The ring structure is over the sensing pad and includes an upper conductive ring and a lower conductive ring between the upper conductive ring and the sensing pad. The first transistor interconnects the upper conductive ring and the control circuit. The second transistor interconnects the lower conductive ring and the control circuit.

A diode for detecting the presence of radiation includes a P region, an N region, an intrinsic region located between the P region and the N region, and a layer of nanoclusters located adjacent to the intrinsic region.

According to an embodiment, a photodetector includes a light converting unit, a first layer, a light detecting unit, and a second layer. The light converting unit converts radiation into light. The first layer absorbs the radiation. The light detecting unit is provided between the light converting unit and the first layer and detects light. The second layer is provided between the first layer and the light detecting unit, has a smaller average atomic weight than an average atomic weight of the first layer, and absorbs radiation scattered in the first layer and a fluorescent X-ray generated in the first layer.