A field shaping multi-well avalanche detector and method for fabrication thereof are disclosed. The field shaping multi-well avalanche detector provides stable avalanche multiplication gain in direct conversion amorphous selenium radiation detectors. The detector provides stable avalanche multiplication gain by eliminating field hot-spots using high-density avalanche wells with insulated wells and field-shaping within each well.

The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer. The first and second electrodes are staggered with respect to each other in a plane perpendicular to the semiconductor layer.

The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate of n-type conductivity, on whose front side there are p-regions; layer from SiO2; aluminum metallization; and a passivating layer. P-region, located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions in the form of circular elements are located in the inactive region on the perimeter of the substrate around the central p-region and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter.

A photoelectric conversion panel includes: a substrate; a gate line and a data line formed on the substrate; a pixel transistor connected to the gate line and the data line; a photoelectric conversion element connected to the pixel transistor; an electro-static-discharge protection circuit formed on the substrate and connected to a ground; a depletion transistor for protection connected between either the gate line or the data line and the electro-static-discharge protection circuit; and an interrupting voltage supply line configured to apply an interrupting voltage to a gate electrode of the depletion transistor for protection.

A radiation detector comprising a radiation sensor obtained by arranging first electrodes on a semiconductor substrate configured to convert incident radiation into charges, an integrated circuit, and an interposer is provided. The interposer comprises first terminals arranged on a first surface facing the sensor and connected to the first electrodes, and second terminals arranged on a second surface facing the integrated circuit and connected to the integrated circuit. Each of the first terminals is connected to one second terminal. The number of the second terminals is smaller than the first terminals. The substrate comprises a third surface on which the first electrodes are arranged and a fourth surface on which second electrodes are arranged. The detector further comprises a selector configured to select the second electrode from the second electrodes to supply a potential for converting the incident radiation into charges.

A radiation detector comprising a radiation sensor obtained by arranging first electrodes on a semiconductor substrate configured to convert incident radiation into charges, an integrated circuit, and an interposer is provided. The interposer comprises first terminals arranged on a first surface facing the sensor and connected to the first electrodes, and second terminals arranged on a second surface facing the integrated circuit and connected to the integrated circuit. Each of the first terminals is connected to one second terminal. The number of the second terminals is smaller than the first terminals. The substrate comprises a third surface on which the first electrodes are arranged and a fourth surface on which second electrodes are arranged. The detector further comprises a selector configured to select the second electrode from the second electrodes to supply a potential for converting the incident radiation into charges.

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layers of the detection pixel units are mutually independent.

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layers of the detection pixel units are mutually independent.