A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53 and 59 from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

The present invention provides a solution increasing illuminance of the irradiation surface in a vicinity of the optical axis and suppressing the generation of the yellow ring phenomenon. The present invention is for a light emitting device 1 having a light emitting element 2 and a light control member 3, the light control member has a light incident surface 31 and light emitting surface 32, when the intersection point of the optical axis and a light emitting surface of the light emitting element 2 is defined as a base point, an angle formed by the optical axis and a line connecting the base point and an optional point is defined as 1, and distance between the optional point of the light incident surface and the base point is defined as D1, for the light incident surface, the distance D1 is increasing as increasing the angle 1 if the angle 1 is 01<1 (radian), and the distance D1 is decreasing as increasing the angle 1 if 121<(p/2) (radian). when an angle formed by the optical axis and a line connecting the base point and an optional point of the light emitting surface is defined as 12 and distance between the optional point of the light emitting surface and the base point is defined as D2, for the light emitting surface, the distance D2 is decreased in range of 0a2<predetermined angle ?2 (radian), and the distance D2 is increased in range of ?2a2<(p/2) (radian).

An LED comprises a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the first electrode. The second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on a surface of the second semiconductor layer away from the active layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc.

A Chip-Scale Packaging (CSP) LED device and a method of manufacturing the same are disclosed. The CSP LED device includes a flip-chip LED semiconductor die and a packaging structure, wherein the packaging structure comprises a soft buffer layer, a photoluminescent structure and an encapsulant structure. The soft buffer layer includes a top portion formed on top of the flip-chip LED semiconductor die, and an edge portion formed covering an edge surface of the flip-chip LED semiconductor die, wherein the top portion has a convex surface, and the edge portion has an extension surface smoothly adjoining the convex surface. The photoluminescent structure is formed on the soft buffer layer covering the convex surface and the extension surface of the soft buffer layer. The encapsulant structure, which has a hardness not lower than that of the buffer layer, is formed on the photoluminescent structure. Therefore, the CSP LED device has improved reliability by improving adhesion strength between the flip-chip LED semiconductor die and the packaging structure, and improved optical performance such as more consistent correlated color temperature (CCT), more uniform spatial color, and higher optical efficacy.

A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. The conductive electrode connection layer is disposed on the upper surface of the substrate and electrically connected with the substrate. The epitaxial structure is disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer, wherein the epitaxial structure has a first peripheral surface. The insulating layer is disposed between the conductive electrode connection layer and the least one epitaxial structure, wherein the insulating layer has a second peripheral surface, and the second peripheral surface is aligned with the first peripheral surface.

A light emitting diode (LED) package according to an exemplary embodiment of the present invention includes a base including a first lead terminal and a second lead terminal, an LED chip disposed on the base, a housing disposed on the base, the housing having a cavity in which the LED chip is disposed, and an encapsulation member having a side surface contacting the housing. The first lead terminal and the second lead terminal each have a first surface and a second surface opposite the first surface, and have an unbent form, respectively. The second surface is exposed to the outside of the LED package.

A light emitting device is provided which includes a light emitting element, a phosphor, and a sealing member. The light emitting element has a light emission peak wavelength in the range not shorter than 400 nm and not longer than 460 nm. The phosphor can be excited by light from the light emitting element, and emit luminescent radiation with a light emission peak wavelength in the range in not shorter than 600 nm and not longer than 700 nm. The sealing member includes a pigment for absorbing a part of the light from the light emitting element. X of the light emission chromaticity of the light emitting device falls within the range of x0.600 in the chromaticity coordinates in the CIE 1931 color space chromaticity diagram.

A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

A light emitting device includes a light emitting element configured to emit visible light; a fluorescent substance excited by light from the light emitting element and configured to emit visible light; a translucent member containing a translucent base material, which provided on the fluorescent substance or configured to contain the fluorescent substance, and provided on the light emitting element; and a film provided on an upper surface of the translucent member, and configured as an agglutination of nanoparticles having a different refractive index from the base material.

A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.