A display device including a substrate including a wiring electrode; a conductive adhesive layer including an anisotropic conductive medium, and disposed to cover the wiring electrode; and a plurality of semiconductor light emitting devices adhered to the conductive adhesive layer and electrically connected to the wiring electrode through the anisotropic conductive medium. Further, the conductive adhesive layer includes a first layer disposed on the substrate; a second layer deposited on the first layer and including the anisotropic conductive medium; and a third layer deposited on the second layer, to which the semiconductor light emitting devices are adhered. Further, at least one of the second layer and the third layer includes a white pigment configured to reflect light emitted by the semiconductor light emitting device.

A light emitting diode package structure including a base, a light emitting diode and an encapsulant is provided. The light emitting diode is disposed on a surface of the base and is adapted to generate and emit a light. The encapsulant is disposed on the base and encapsulates the light emitting diode. The encapsulant has a surface parallel to the surface of the base and a plurality of surfaces perpendicular to the surface of the base. The light, after passing through the surface of the encapsulant parallel to the surface of the base, has a first light intensity. The light, after passing through the surfaces of the encapsulant perpendicular to the surface of the base, has a second light intensity. The first light intensity is greater than the second light intensity. In addition, a manufacturing method of a light emitting diode package structure is also provided.

A light-emitting device in accordance with the present invention includes a mounting substrate; an LED chip bonded to a surface of the mounting substrate with a bond; and an encapsulating portion covering the LED chip. The bond transmits light from the LED chip. The mounting substrate includes: a light-transmissive member having a planar size larger than that of the LED chip; and first and second penetrating wirings which penetrate the light-transmissive member in the thickness direction thereof and are electrically connected to first and second electrodes of the LED chip via first and second wires, respectively. The light-transmissive member includes at least two light-transmissive layers with different optical properties which are stacked in the thickness direction. A light-transmissive layer of the light-transmissive layers which is farther from the LED chip is higher in reflectance to the light.

Provided is a light unit including a plurality of LED light sources formed on a PCB, a resin layer stacked on the PCB to diffuse and guide emitted light forwards, and a diffusion plate having an optical pattern printed thereon to shield light emitted from the LED light sources. The optical pattern is composed of a diffusion pattern implemented as at least one layer, or a combination of the diffusion pattern layer and a light shielding pattern. The light unit forms an optical pattern for shielding or diffusing light on a surface of a light diffusion plate of the back-light unit, and combines a diffusion pattern and a metal pattern to attain uniformity of light and realize a yellow-light shielding effect, thus leading to a reliable light quality.

An electronic arrangement (1) comprising a carrier (2), on which at least one connecting area (6) is arranged. At least one electronic component (3a, 3b, 3c) is fixed on the connecting area (6) by means of a contact material (4). A covering area (5) surrounds the connecting area (6) on the carrier (2). At least one covered region (15, 16, 17, 18, 19) is covered by a covering material (10). The covering material (10) is designed in such a way that an optical contrast between the covering area (5) and the covered region (15, 16, 17, 18, 19) is minimized.

A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

A light emitting device includes a base substrate having a recessed portion at a flat upper surface thereof. The recessed portion has an inner wall. A sealing member is provided in the recessed portion. The sealing member contains surface-treated particles, or particles coexisting with a dispersing agent. The particles have a particle diameter of 1 nm or more and 100 m or less. The particles are made of an organic material or an inorganic material. The organic material and the inorganic material are free of a phosphor. The at least a part of an edge portion of the sealing member is a region located in the vicinity of an edge of the recessed portion which is a boundary between a surface of the inner wall and the flat upper surface. The at least one of the particles and aggregates of particles are unevenly distributed in the region.

A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a first side surface. The cover layer covers the light-emitting element and includes a first transparent binder and a plurality of wavelength conversion particles dispersed within the first transparent binder. The anti-adhesion layer includes a fluoro-containing material, and is disposed on the cover layer and the top surface.

A conversion element (10) is specified, comprising a scattering layer (12), a reflection layer (14), and a conversion layer (16) arranged between the scattering layer (12) and the reflection layer (14). The scattering layer (12) is designed to transmit a first portion (20) of a primary radiation (18) impinging on it from a side facing away from the conversion layer (16) into the conversion layer (16), and to scatter a second portion (22) of the primary radiation (18) impinging on it towards that side of the scattering layer (12) which faces away from the conversion layer (16). The conversion layer (16) comprises at least one conversion means (25) which is designed to convert at least part of the first portion of the primary radiation (18) into a second radiation (19) having a higher wavelength different from the primary radiation (18). The reflection layer (14) has a reflective effect at least with regard to the second radiation (19).

A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.