A display apparatus includes a substrate including island portions spaced apart from each other, a bridge portions connecting the island portions to each other, openings disposed between island portions, at least one light-emitting element arranged in each of the island portions, first encapsulation layers disposed on the island portions, respectively, each of the first encapsulation layers sealing the at least one light-emitting element, a second encapsulation layer disposed on the first encapsulation layers to cover the first encapsulation layer, sealing the plurality of island portions and the bridge portions, and filling at least an upper portion of the openings, a lower encapsulation layer disposed under the substrate, and a lower adhesive layer arranged between the lower encapsulation layer and the substrate, wherein the lower adhesive layer fills at least a portion of a lower portion of the openings.

Disclosed are a display panel including a light emitting panel, and a color conversion panel facing the light emitting panel, wherein the color conversion panel being converts an emission spectrum of light emitted from the light emitting panel, wherein the color conversion panel may include a color conversion layer including a plurality of regions including a color conversion region, and bank defining each region of the color conversion layer, the color conversion region may include quantum dots, and a refractive index of the bank is lower than a refractive index of the quantum dots, and an electronic device including the same.

Light emitting devices comprise: one or more light emitting diode (LED) dies in a reflector cup; a first light-scattering layer contacting side surfaces of the LED dies, and a bottom wall and a sidewall of the reflector cup, the first light-scattering layer comprising light-scattering particles and a first binder material; and a second light-scattering layer contacting at least a top surface of the LED dies, and the first light-scattering layer at an interface, the second light-scattering layer comprising phosphor particles and a second binder material.

Semiconductor devices and more particularly mounting structures for edge-emitting semiconductor devices are disclosed. Exemplary edge-emitting semiconductor devices include light-emitting diode (LED) edge emitters. Mounting structures include submounts with recesses configured to receive edge-emitting semiconductor devices such that emitting edges are positioned toward desired emission directions. Submount recesses are disclosed that include corresponding electrical connections for edge-emitting semiconductor devices. Multiple edge-emitting semiconductor devices are mechanically supported and electrically connected within a single recess or with multiple recesses. Corresponding devices are disclosed that include arrays of edge-emitting semiconductor devices in one or more recesses.

Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.

An LED package includes a light source, a light transmissive member, and a light reflecting layer. The light source includes a resin package, a light emitting element and a wavelength conversion material. The resin package includes first and second leads and a resin member. The resin package defines a recess having a bottom face defined by portions of the first and second leads, and a portion of the resin member, and a lateral wall defined by a portion of the resin member. The light emitting element is disposed on or above the bottom face in the recess. The wavelength conversion material is disposed in the recess. The light transmissive member is disposed on or above the light source. The light reflecting layer is disposed on or above the light transmissive member at least on an upper side along an optical axis of the light emitting element.

A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

An embodiment of a solid optical sky-sun diffuser, which comprises a transparent solid matrix embedding a dispersion of transparent nanoparticles having an average size d in the range 10 nmd240 nm; wherein: the ratio between the blue and red scattering optical densities Log [T(450 nm)]/Log [T(630 nm)] of said diffuser falls in the range 52.5, where T() is the Monochromatic Normalized Collinear Transmittance; in at least one propagation direction, said Monochromatic Normalized Collinear Transmittance is T(450 nm)0.4; in at least one propagation direction said Monochromatic Normalized Collinear Transmittance is T(450 nm)0.9, said propagation direction being the same or different from that at which said Monochromatic Normalized Collinear Transmittance is T(450 nm)0.4.

A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.