Provided are a display apparatus including a light-emitting device structure, and a method of manufacturing same. The light-emitting device structure includes: a substrate; a semiconductor device layer on the substrate and including semiconductor devices; and a display device layer including light-emitting rods on the semiconductor device layer and connected to the semiconductor devices, wherein the light-emitting rods include: first, second, and third light-emitting rods configured to respectively emit light having first, second, and third wavelengths, wherein each of the light-emitting rods includes a first type semiconductor layer, an active layer, and a second type semiconductor layer, which are sequentially arranged, and wherein, in at least one of the light-emitting rods, the first type semiconductor layer includes a pore containing a wavelength conversion cluster configured to convert light generated from the active layer into light having a wavelength different from the light generated from the active layer.

The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).

A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Vertical solid-state transducers (SSTs) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

A submount-free light emitter package with primary optic and method of fabricating the same are disclosed, these packages and methods comprising a light emitter with an optic. The optic may have a shape, which includes a portion that is wider at a point further from the light emitter than a point which is closer. The method includes a light emitter disposed on a carrier surface with at least one structure at least partially surrounding the light emitter. The encapsulant is over the light emitter forming a primary optic. The intermediate element at least partially defines the shape of the primary optic.

A drive circuit substrate, LED display panel and method of forming the same and display device are provided, in field of display technologies. The drive circuit substrate includes a base substrate and drive electrodes arranged in an array on a surface of the base substrate, where at least one conductive structure is arranged on a surface of each drive electrode away from the base substrate, the conductive structure is electrically connected to corresponding drive electrode. The driving electrodes include first and second driving electrodes, horizontal height of first driving electrode is greater than horizontal height of second driving electrode. The conductive structure includes first conductive structure on a surface of the first driving electrode away from the base substrate and second conductive structure on a surface of the second driving electrode away from the base substrate, height of second conductive structure is greater than height of first conductive structure.

An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.

The present invention relates to a point source light-emitting diode containing a support substrate, a metal layer, a first conduction-type layer, an active layer, a second conduction-type layer containing a current-narrowing structure, and a topside electrode having an aperture, stacking in this order, in which the metal layer is provided locally in an area corresponding to the aperture and has a metal reflection face by which a light generated in the active layer is reflected towards the aperture side, and the point source light-emitting diode further contains a light-reflection reduction face having a lower reflectivity and/or a higher absorptivity than the metal reflection face, provided around the metal reflection face.