A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a contact layer on the second conductive semiconductor layer; an insulating layer on the contact layer; a first branch electrode electrically connected to the first conductive semiconductor layer; a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer; a first pad electrode electrically connected to the first branch electrode; a second pad electrode contacts the contact layer by passing through the insulating layer; a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and a plurality of second via electrodes provided through provided through the insulating layer to electrically connect the second branch electrode to the contact layer.

A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

A display device may include: a substrate including a display area and a non-display area; and at least one pixel disposed in the display area, and comprising at least one pixel including an emission area that emits light. The at least one pixel may include: at least one sub-electrode extending in a direction on the substrate; at least one branch electrode extending in a direction and spaced apart from the sub-electrode; a first insulating layer disposed on the at least one sub-electrode and the at least one branch electrode; first electrodes disposed on the first insulating layer and electrically connected with the at least one sub-electrode; second electrodes disposed on the first insulating layer and electrically connected with the at least one branch electrode; and at least one light emitting element aligned between at least one of the first electrodes and at least one of the second electrodes.

In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

A single pixel multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are horizontally formed as sub-pixels to combine light. In some embodiments, two or more light emitting layers are formed on a substrate with integrated circuits and the two or more light emitting layers are bonded together with bonding layers. In some embodiments, the two or more LED structures are formed by utilizing a respective top light emitting layer of the respective LED structure and by removing extra top light emitting layer(s) with the respective LED structure. In some embodiments, the up and down orientation of the P-type region and the N-type region within the first light emitting layer is different from the up and down orientation of the P-type region and the N-type region within the second light emitting layer.

A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

A display device includes a first electrode extending in a first direction; a second electrode extending in the first direction and spaced apart from, in a second direction, the first electrode; a light-emitting element having a shape extending in a direction and between the first and second electrodes such that the direction is parallel to the second direction; a first contact electrode having a shape extending in a third direction and having at least a portion on the first electrode; and a second contact electrode having a shape extending in the third direction, spaced apart from, in a fourth direction, the first contact electrode, and having at least a portion on the second electrode, the first contact electrode electrically contacts a side of the light-emitting element, and the second contact electrode electrically contacts another side of the light-emitting element.

Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.