A light-emitting diode device including a substrate, a structural layer, and a light-emitting diode mesa is provided. The substrate has a first surface and a second surface arranged opposite each other. The first surface includes a first region and a second region, and the second region surrounds the first region. The structural layer covers the first region and the second region and at least includes an electrode layer, a second insulating layer, and a first insulating layer stacked in sequence from the first surface. The light-emitting diode mesa is arranged above the first region of the structural layer and includes a semiconductor epitaxial layer. The semiconductor epitaxial layer includes a second semiconductor layer, an active layer, and a first semiconductor layer stacked in sequence from the first surface.

A display device including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the base substrate, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, the light emitting device including a light emitting structure electrically connected to the outer electrodes.

An LED and a light emitting device are provided, which includes an epitaxial structure, a transparent conductive layer, an insulating structure and a metal reflective layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The transparent conductive layer is disposed on the second semiconductor layer. The insulating structure is disposed on the transparent conductive layer, and an opening is defined in the insulating structure. The transparent conductive layer is exposed from the opening. A step portion is formed on a sidewall of the opening, and divides the opening into a first opening and a second opening. An opening width of the first opening is smaller than that of the second opening. The metal reflective layer is disposed on the insulating structure. The metal reflective layer fills the first opening and the second opening, and forms electrical contact with the second semiconductor layer.

The semiconductor light-emitting device includes a base layer including an n-type semiconductor layer, a tunnel junction part on the n-type semiconductor layer, and a p-type semiconductor layer on the tunnel junction part, a plurality of columnar semiconductors on the base layer, a buried layer filling in a space between each of the plurality of columnar semiconductors, and a current suppression region suppressing a current, where each of the plurality of columnar semiconductors has a hexagonal column, and an active layer covering the hexagonal column, where the hexagonal column has a hexagonal first surface and a second surface opposite to the first surface, where the first surface faces the base layer, where the second surface faces the current suppression region, where the buried layer is an n-type semiconductor, and where the hexagonal column is a p-type semiconductor.

This application provides a pixel unit, a manufacturing method therefor, a microdisplay, and a discrete device. The pixel unit includes a backplane, a display unit, a cathode electrical connection structure, and at least one anode electrical connection structure. The display unit includes at least one device layer, the at least one device layer is vertically stacked in sequence, each of the at least one device layer includes a P-type contact layer, a pixel layer, and an N-type contact layer stacked in sequence, and the P-type contact layer is located on a side of the device layer facing the backplane; and each of the at least one anode electrical connection structure is electrically connected to the P-type contact layer of the corresponding device layer, and the cathode electrical connection structure is electrically connected to the N-type contact layer of each of the at least one device layer respectively.

The present invention provides a flip-chip mounted monolithic micro LED having improved contrast. The light-emitting device includes a substrate, an n-type layer, a light-emitting layer, a p-type layer, a transparent electrode, a p-electrode, an n-electrode, a protective film, an absorbing structure, and a side wall insulating film. The absorbing structure is a layered body in which a dielectric film and a metal film are alternately deposited, and the top layer is a dielectric film. Reflected light of light emitted from the light-emitting layer or reflected light of light from the outside, or transmitted light from the backside of the substrate can be absorbed by the absorbing structure, thereby improving contrast.

Various embodiments of light emitting dies and solid state lighting (SSL) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

A micro LED includes a bonding layer provided at a bottom of the micro LED; a first P type semiconductor layer formed on the bonding layer and electrically connected to the bonding layer; a first light emitting layer formed on the first P type semiconductor layer; a N type semiconductor layer formed on the first light emitting layer; a second light emitting layer formed on the N type semiconductor layer; and a second P type semiconductor layer formed on the second light emitting layer; wherein the first P type semiconductor layer and the second P type semiconductor layer are electrically connected to a first electrode, and the N type semiconductor layer is electrically connected to a second electrode.

A micro LED includes a bonding layer provided at a bottom of the micro LED; a first N type semiconductor layer formed on the bonding layer and electrically connected to the bonding layer; a first light emitting layer formed on the first N type semiconductor layer; a P type semiconductor layer formed on the first light emitting layer; a second light emitting layer formed on the P type semiconductor layer; and a second N type semiconductor layer formed on the second light emitting layer; wherein the first N type semiconductor layer and the second N type semiconductor layer are electrically connected to a first electrode, and the P type semiconductor layer is electrically connected to a second electrode.

A light emitting element of a face-up type using a group III nitride semiconductor emits light with wavelengths of 210 to 300 nm. The light emitting element has an n-type layer, an active layer provided on the n-type layer, a p-type layer provided on the active layer, an n-side electrode provided on the n-type layer and having a comb shape, a p-side contact electrode provided on and in contact with the p-type layer and transmitting light of the wavelength, and a p-side electrode provided on the p-side contact electrode and having a comb shape. The p-side electrode has p-side extending portions extending in a direction. The n-side electrode has n-side extending portions extending in the direction, each n-side extending portion being disposed between the p-side extending portions adjacent to the n-side extending portion. A distance between the p-side extending portion and the n-side extending portion is 140 m or less.