An assembling substrate in which a plurality of light-emitting elements are self-assembled is presented herein. The assembling substrate comprises an assembly substrate; a plurality of first assembling electrodes on the assembly substrate; a plurality of second assembling electrodes on the assembly substrate, the plurality of second assembling electrodes alternating on the assembly substrate with the plurality of first assembling electrodes; and a plurality of concave-convex structures, wherein each of the plurality of concave-convex structures is between one of the plurality of first assembling electrodes and one of the plurality of second assembling electrodes.

A display device includes a substrate, first and second bridge electrodes on the substrate and spaced apart from each other, a first electrode on the first bridge electrode, a second electrode on the second bridge electrode and spaced apart from the first electrode, a first insulating layer on the first electrode and the second electrode, a light emitting element on the first insulating layer, and on the first electrode and the second electrode, a first connection electrode on the first electrode, and contacting the light emitting element and the first bridge electrode, and a second connection electrode on the second electrode, and contacting the light emitting element and the second bridge electrode, wherein the first electrode directly contacts the first bridge electrode, and is separated from the first connection electrode, and wherein the second electrode directly contacts the second bridge electrode, and is separated from the second connection electrode.

A display device includes a first electrode disposed on a substrate, a first insulating film disposed on the first electrode and having a first opening formed, a second insulating film disposed on the first insulating film and having a second opening, and a contact electrode electrically contacting at least a portion of the first electrode through the first opening and the second opening, wherein a side surface of the first insulating film defines the first opening, and the second insulating film overlaps the side surface of the first insulating film such that the contact electrode and the first insulating film are not in contact with each other.

A display device includes a substrate including first areas and second areas, active layers disposed on the substrate in the second areas, a first conductive layer including first gate electrodes, a first interlayer insulating layer disposed on the first conductive layer and the substrate, a second conductive layer including first and second electrodes which are disposed in each of the first areas to be spaced apart from each other, a second interlayer insulating layer disposed on the second conductive layer and the first interlayer insulating layer, a third conductive layer including source electrodes and drain electrodes which are disposed on the second interlayer insulating layer in the second areas, a via layer disposed on the third conductive layer in the second areas and exposing the first areas and light-emitting elements disposed on the second interlayer insulating layer in each of the first areas.

A light-emitting device includes a first semiconductor layer; an active layer on the first semiconductor layer and having an upmost surface with a first width; and a second semiconductor layer on the active layer and having a bottommost surface with a second width less than the active layer.

A single pixel multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are horizontally formed as sub-pixels to combine light. In some embodiments, two or more light emitting layers are formed on a substrate with integrated circuits and the two or more light emitting layers are bonded together with bonding layers. In some embodiments, the two or more LED structures are formed by utilizing a respective top light emitting layer of the respective LED structure and by removing extra top light emitting layer(s) with the respective LED structure. In some embodiments, the up and down orientation of the P-type region and the N-type region within the first light emitting layer is different from the up and down orientation of the P-type region and the N-type region within the second light emitting layer.

A single pixel multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are horizontally formed as sub-pixels to combine light. In some embodiments, two or more light emitting layers are formed on a substrate with integrated circuits and the two or more light emitting layers are bonded together with bonding layers. In some embodiments, the two or more LED structures are formed by utilizing a respective top light emitting layer of the respective LED structure and by removing extra top light emitting layer(s) with the respective LED structure. In some embodiments, the up and down orientation of the P-type region and the N-type region within the first light emitting layer is different from the up and down orientation of the P-type region and the N-type region within the second light emitting layer.

Light emitting nanowire devices, in accordance with aspects of the present technology, can include a short period superlattice (SPSL) region underlaying an N-polar multiple quantum well (MQW) region. The short period superlattice (SPSL) region can relax strain in the multiple quantum well (MQW) region. The nanowires can be submicron scale and characterized by red electroluminescence.

A vehicle window of a vehicle includes a light emitting assembly having a light emitting element package configured to emit light from a light emitting surface, and a reflector having a reflection surface that faces the light emitting surface and that is configured to reflect light from the light emitting element package.

A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.