A display device includes: a first sub-pixel including a first first-type light emitting element configured to emit light in a blue wavelength band, the first sub-pixel being configured to emit light in the blue wavelength band; a second sub-pixel configured to emit light in a green wavelength band; and a third sub-pixel including a second first-type light emitting element configured to emit light in the blue wavelength band, a third-type light emitting element configured to emit light in a red wavelength band, and a first wavelength conversion layer, the third sub-pixel being configured to emit light in the red wavelength band. A threshold voltage of the third-type light emitting element is lower than a threshold voltage of the second first-type light emitting element.

A display device includes first and second internal banks extending in a first direction on a substrate and spaced apart from each other in a second direction different from the first direction; a first electrode including a first main electrode extending in the first direction on a side of the first internal bank and a first sub-electrode extending in the first direction on another side of the first internal bank and at least partially spaced apart from and facing the first main electrode; a second electrode extending in the first direction on a side of the second internal bank and spaced apart from and facing the first main electrode; and a light emitting element disposed between the first internal bank and the second internal bank, and the light emitting element has an end disposed on the first main electrode and another end on the second electrode.

There are provided a display device and a method of manufacturing the display device. The display device includes: a substrate; and a display element layer disposed on the substrate. The display element layer includes: an anode electrode and a cathode electrode; an anode reflective electrode layer disposed on the anode electrode; a cathode reflective electrode layer disposed on the cathode electrode; a light emitting element including a first element electrode and a second element electrode; an anode transparent electrode layer electrically connecting the anode reflective electrode layer and the first element electrode to each other; and a cathode transparent electrode layer electrically connecting the cathode reflective electrode layer and the second element electrode to each other.

Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure.

A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.

A display device comprises a substrate, a semiconductor layer thereon, a first insulating layer on the semiconductor layer, a first conductive layer on the first insulating layer and including a first electrode pattern, a second insulating layer on the first insulating layer and including first and second conductive patterns, a third insulating layer on the second conductive layer, and a display element layer on the third insulating layer and including a first pixel electrode connected to the first conductive pattern through a first via hole, a second pixel electrode connected to the second conductive pattern through a second via hole, and a micro light-emitting element between the pixel electrodes, the first conductive pattern contacting the semiconductor layer through a first contact hole and the first electrode pattern through a second contact hole, and the second conductive pattern overlapping the first electrode pattern to form a first capacitor therewith.

Discussed herein is a transparent light emitting diode (LED) display device. A capacitor of a pixel-driving circuit is integrated with an LED, and thus that the area of the pixel-driving circuit is reduced, and the transmission area is increased. In this manner, it is possible to achieve high transmittance without compromising the display quality.

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.10.7, and a ratio of the third area to the first area is less than 0.2.

Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

A vertical thin-film (VTF) light emitting diode (LED) having embedded contacts is described. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts has structure where the metal layer constitutes both bondpad(s) and associated electric contact to the semiconductor. The metal layer is embedded and, hence, no longer blocking light from the light emitting surface. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts comprises a plurality of group III-V semiconductor material layers, including binary, ternary, and quaternary alloys of gallium (Ga), aluminum (Al), indium (In), and phosphorus (P) and a multiple quantum well layer on a substrate. At least one ne of the plurality of group III-V semiconductor material layers comprise an aluminum indium phosphide (AlInP) layer or a low confinement layer (LCL) comprising aluminum indium gallium phosphide (AlInGaP).