Methods of fabricating a light-emitting device are provided. A light-emitting device can be formed from bonding a lens including a plug and a cap to an LED package including a socket configured to receive the plug. The lens can be fabricated using an injection mold formed from a well secured to the LED package and injecting a material into the injection mold to cure into a shape of the lens. The lens can also be fabricated using a blank about the shape of the lens and machining the blank to produce the plug and the cap of the lens. The lens can be bonded to the LED package using a convex bead of adhesive deposited on the surface of the LED package and spreading the adhesive between the lens and the LED package.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

An LED package structure includes a carrier mounted with a plurality of LED chips, a first glue-layer, a second glue-layer and an encapsulation resin filled within the first and the second glue-layers. The first glue-layer is formed on a top surface of the carrier and has a thin-film structure which is substantially flat on a top surface thereof. The second glue-layer is stacked on the first glue-layer. The second glue-layer has a height higher than that of the first glue-layer. The second glue-layer has a volume greater than that of the first glue-layer. The present invention also provides a method of LED package structure to stably produce a dam structure with uniform shape and high ratio of height/width.

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

A light-emitting apparatus includes: a substrate; a plurality of LED chips disposed on the substrate and including a plurality of blue LED chips which emit blue light and a plurality of red LED chips which emit red light; and a sealing member that contains a yellow phosphor and seals the plurality of LED chips together. The plurality of LED chips include: a first LED chip group made up of the blue LED chips; a second LED chip group made up of the red LED chips and disposed around the first LED chip group in an annular shape centered on an optical axis; and a third LED chip group made up of the blue LED chips and disposed around the second LED chip group in an annular shape centered on the optical axis.

The present disclosure provides an encapsulation structure, a method for encapsulating an OLED device, and a flexible display device. The encapsulation structure includes: a flexible substrate; an OLED device arranged on the flexible substrate; a thin film encapsulation layer covering the OLED device and including a plurality of first inorganic films and a plurality of organic polymer films arranged alternately; and a second inorganic film having a nanowire structure and covering the thin film encapsulation layer.

A light-mixing multichip package structure includes a circuit substrate, a first light-emitting module, a first package body, a second light-emitting module and a second package body. The first light-emitting module includes a plurality of first light-emitting elements disposed on the circuit substrate and electrically connected to the circuit substrate. The first package body is disposed on the circuit substrate to enclose the first light-emitting elements. The second light-emitting module includes a plurality of second light-emitting elements disposed on the circuit substrate and electrically connected to the circuit substrate, and the first light-emitting module and the first package body are surrounded by the second light-emitting elements. The second package body is disposed on the circuit substrate to enclose the first light-emitting module, the second light-emitting module and the first package body.

In one embodiment, a method of manufacturing an optical communication device is disclosed. An optical sub-assembly and optical platform can form the optical communication device. Pre-defined break lines are placed on a carrier wafer. The wafer can accommodate a modulator sub-mount and a laser sub-mount. A tooling process is used to place the modulator sub-mount on an optical platform and the laser sub-mount adjacent to a thermo-electrical cooler. The laser sub-mount can be hermetically enclosed and aligned to communicate with the modulator sub-mount.

A light diffuser includes: a thermoplastic resin base which has a thermal expansion coefficient of at least 410.sup.5/K and at most 810.sup.5/K; and a light diffusion layer which is disposed on a surface of the thermoplastic resin base and includes an acrylic resin film and an acrylic resin particle, the acrylic resin film including one or more acrylic resins having a glass transition temperature of at least 30 C. and at most 50 C., the acrylic resin particle being included in the acrylic resin film and having an average particle size of at least 1 m and at most 15 m.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.