Provided is a light-emitting device with quantum dots that has a small in-plane variation in luminescence intensity. A light-emitting device (1) includes a light-emitting part (11), a cell (10), a light source (12), and an incident light scatting part. The light-emitting part (11) contains quantum dots. The cell (10) encapsulates the light-emitting part (11). The light source (12) emits light at a wavelength exciting the quantum dots to the light-emitting part (11). The incident light scatting part is disposed between the light source (12) and the light-emitting part (11). The incident light scatting part scatters light incident on the light-emitting part (11).

A LED illumination device includes a carrier structure, a suspension structure, and a light-emitting structure. The carrier structure includes a carrier body and a first heat-conducting body fixedly disposed inside the carrier body. The carrier body has an outer thread structure disposed on an outer perimeter surface. The first heat-conducting body has a bottom contacting surface exposed from a bottom side of the carrier body. The suspension structure includes a first suspension element detachably disposed on a top side of the carrier body. The light-emitting structure includes a circuit substrate and a light-emitting unit. The circuit substrate is detachably disposed on the bottom side of the carrier body to contact the bottom contacting surface of the first heat-conducting body, and the light-emitting unit is disposed on the circuit substrate. Therefore, heat generated by the light-emitting unit is guided to the first heat-conducting body through the circuit substrate.

A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. The micro epitaxial structures are periodically disposed on the substrate and located between the first substrate and the second substrate. A coefficient of thermal expansion of the first substrate is CTE1, a coefficient of thermal expansion of the second substrate is CTE2, a side length of each of the micro epitaxial structures is W, W is in the range between 1 micrometer and 100 micrometers, and a pitch of any two adjacent micro epitaxial structures is P, wherein W/P=0.1 to 0.95, and CTE2/CTE1=0.8 to 1.2.

A method of manufacturing a light emitting device includes: mounting at least one light emitting element on a support member with a first surface of the light emitting element facing upward; applying an adhesive to the first surface of the light emitting element by holding the support member and dipping the first surface of the light emitting element in the adhesive; and disposing a light-transmissive member on the first surface of the light emitting element via the adhesive.

A light emitting device includes a base member; a light emitting element mounted on the base member; a light-transmissive member that covers an upper surface of the light emitting element, and is substantially rectangular in a plan view; and a light reflecting member that covers a lateral surface of the light-transmissive member, the light reflecting member having a substantially rectangular frame shape in a plan view. A width of the light reflecting member is smaller along a short side of the light-transmissive member than along a long side of the light-transmissive member. A height of the light reflecting member is smaller along the short side of the light-transmissive member than along the long side of the light-transmissive member at a position separated from an outer edge of the light reflecting member by a predetermined distance.

An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, a light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.

The present disclosure relates to a method of making an optical assembly. An optical device is secured in a fixture, the optical device having an optical surface, wherein a silicone film is positioned with respect to the optical surface, the silicone film having a distal surface relative to the optical surface. The method includes, among other features, imprinting the distal surface of the silicone film to create a surface imprint in the distal surface of the silicone film.

A light emitting device manufacturing method includes bonding an electrode of a light emitting element to a conductive member of a base. First wavelength conversion particles, second wavelength conversion particles and filling particles are electrodeposited on a surface of the light emitting element to form a wavelength conversion layer in which the filling particles are disposed among the first wavelength conversion particles and the second wavelength conversion particles. The first wavelength conversion particles contain aluminum. The second wavelength conversion particles have surfaces covered with covering material which contains aluminum. The filling particles contain aluminum. The filling particles have particle size smaller than particle sizes of both the first wavelength conversion particles and the second wavelength conversion particles. The filling particles have aspect ratio smaller than aspect ratios of both the first wavelength conversion particles and the second wavelength conversion particles.

A light emitting device includes a metal support structure comprising Cu; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer; a top interface layer on the GaN-based semiconductor structure and comprising Ti; and a contact pad on the top interface layer and comprising Au, wherein the GaN-based semiconductor structure is less than 1/20 thick of a thickness of the metal support structure.

A display apparatus includes a first base substrate including an effective area and a pad area adjacent to the effective area, a second base substrate on the first base substrate to overlap the effective area and expose the pad area of the first base substrate at a side surface of the second base substrate, a spacer on the exposed pad area of the first base substrate and facing the side surface of the second base substrate, the spacer being spaced apart from the side surface of the second base substrate, a sealant between the spacer and the side surface of the second base substrate to contact both the spacer and the side surface of the second base substrate, and an optical film on the second base substrate, the optical film extended further than the side surface of the second base substrate to overlap the sealant and the spacer.