H10K102/10

Composite electrodes and methods for the fabrication and use thereof

Disclosed herein are precursor compounds, composite electrodes comprising the same, and methods of making and use thereof.

Manufacturing method of OLED panel and OLED panel

The present application provides a manufacturing method of an organic light-emitting diode (OLED) panel and the OLED panel. Conventional OLED panels have problems like low aperture ratios and low capacitance. The present application overlaps a first conductive layer and a light shielding layer, a pixel electrode is connected to a source, and a planarization layer and a passivation layer in a capacitor area are removed. Therefore, an aperture ratio and capacitance of the OLED panel are greatly improved, the present application has a high degree of design freedom to be used in larger-sized OLED panels, and capacitance retention is improved.

Display panel having cathode layer electrically connected to auxiliary cathode layer and manufacturing method thereof

A display panel and a method of manufacturing the display panel are disclosed. A pixel definition layer and an organic light-emitting layer are fabricated on a substrate provided with a first auxiliary cathode layer and a second auxiliary cathode layer. A connecting hole is formed on the pixel definition layer corresponding to the second auxiliary cathode layer. A solvent is printed in the connecting hole to allow the organic light-emitting layer to be dissolved around the connecting hole to the pixel definition layer, so that the second auxiliary cathode layer is exposed. A cathode layer is connected in parallel with the second auxiliary cathode layer and the first auxiliary cathode layer through the connecting hole.

Method for preparing inorganic perovskite battery based on synergistic effect of gradient annealing and antisolvent, and prepared inorganic perovskite battery
12057273 · 2024-08-06 · ·

A method for preparing an inorganic perovskite battery based on a synergistic effect of gradient annealing and antisolvent includes preparing a perovskite layer by a gradient annealing and an antisolvent treatment. A thickness of the perovskite layer is 100 to 1000 nm; when preparing a perovskite precursor solution of the perovskite layer, a solvent is an amide-based solvent and/or a sulfone-based solvent; a concentration of the perovskite precursor solution for preparing the perovskite layer is 0.4 to 2 M; and the gradient annealing is conducted at 40 to 70? C./0.5 to 5 min+70 to 130? C./0.5 to 5 min+130 to 160? C./5 to 20 min+160 to 280? C./0 to 20 min; and a solvent for the anti-solvent treatment is an alcohol solvent, a benzene solvent or an ether solvent.

Highly efficient inverted polymer solar cells using an indium gallium zinc oxide interfacial layer

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Organic-inorganic hybrid perovskites

The application relates to organic-inorganic hybrid perovskites of formula (I): [(A).sub.1?2.48p?b(B).sub.3.48p+b].sub.(1+2p?y)/1+p)(Pb).sub.1?p?m(M).sub.m(X.sup.1).sub.3?y?q(X.sup.2).sub.q(I), and perovskite photovoltaic cells comprising the same.

OLED display panel, manufacturing method thereof, and display device

An organic light-emitting diode (OLED) display panel, a manufacturing method thereof, and a display device are provided. The OLED display panel includes a substrate; an array functional layer; a light-emitting layer; a thin-film encapsulation layer; and a liquid crystal layer, which is disposed on the thin-film encapsulation layer, including a first liquid crystal region arranged on a non-pixel region and a second liquid crystal region arranged on a pixel region, wherein liquid crystal molecules positioned in the first liquid crystal region are aligned parallel to the substrate.

Display device and method for manufacturing display device

A display device includes a plurality of pixel electrodes, a common electrode common to the plurality of pixel electrodes, and a light-emitting layer sandwiched between the plurality of pixel electrodes and the common electrode. The light-emitting layer includes quantum dots covered by ferritin. Each of the plurality of pixel electrodes and the quantum dots are bonded via a peptide modifying the ferritin.

Display device having a thin electrode that has a uniform film thickness

Provided are a TFT layer, a light-emitting element layer provided with a plurality of light-emitting elements each including a first electrode, a function layer, and a second electrode, and a sealing layer configured to seal the light-emitting element layer. The second electrode is an electrode common to the plurality of light-emitting elements and including metal nanowires. The function layer includes a light-emitting layer and an electron transport layer provided between the light-emitting layer and the second electrode. The electron transport layer includes zinc oxide nanoparticles and a water soluble resin.