Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present disclosure, there is provided a liquid crystal display device, including: a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein the gate electrode includes a reference plane and a protrusion protruding from the reference plane in a horizontal direction, and the protrusion overlaps the source electrode and the drain electrode.

A pixel structure of a liquid crystal display panel includes a substrate, a switch device, a pixel electrode, an insulating layer, and a patterned common electrode. The switch device and the pixel electrode are disposed on the substrate, and the switch device is electrically connected to the pixel electrode. The insulating layer is disposed on the substrate and covers the switch device and the pixel electrode, wherein the insulating layer includes a plurality of trenches. The patterned common electrode is disposed on the insulating layer and does not cover the trenches. The pixel structure of the liquid crystal display panel and related manufacturing method are able to enhance the driving effect of the liquid crystal molecules, reduce the driving voltage and increase alignment performance of the alignment film.

An FFS mode array substrate and a manufacturing method thereof are provided. The FFS mode array substrate has: a glass substrate provided with a gate electrode thereon; a first insulation layer; a semiconductor layer having a channel region and a common electrode region to form a channel semiconductor layer on the channel region of the semiconductor layer, and form a common electrode layer on the common electrode region of the semiconductor layer by doping semiconductor thereon; and a second insulation layer provided with a first through hole and a second through hole therein.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

The present invention provides a display substrate and a manufacturing method thereof. The display substrate of the present invention comprises a first structure and a second structure; wherein, the second structure is provided with a lap portion disposed on the first structure and a main body portion connected with the lap portion and outside the first structure; the first structure has a thinned region connected to an edge thereof, and a thickness of the first structure in the thinned region is smaller than that outside the thinned region; and at least part of the lap portion is located on the thinned region, and at least part of the main body portion outside the thinned region is in direct connection with the part of the lap portion on the thinned region.

Embodiments of the invention provide a display panel and a manufacturing method thereof, and a display device comprising such a display panel. At least one sensor is integrated into the display panel through a semiconductor process that is at least partially synchronously performed with processes of forming the array substrate and/or color filter substrate of the display panel, such that an integration level of the sensor on the display panel is increased and the process is simplified.

A liquid crystal display includes a first pixel and a second pixel that extend in a data line direction. The first and second pixels are connected to a same data line, and the first pixel is closer to a data driver than the second pixel. A channel width of a thin film transistor of the first pixel is less than a channel width of a thin film transistor of the second pixel.

A manufacturing method of a TFT substrate structure is provided, in which a graphene layer is formed on a semiconductor layer and after the formation of a second metal layer, the second metal layer is used as a shielding mask to conduct injection of fluoride ions into the graphene layer to form a modified area in a portion of the graphene layer that is located on and corresponds to a channel zone of the semiconductor layer. The modified area of the graphene layer shows a property of electrical insulation and a property of blocking moisture/oxygen so as to provide protection to the channel zone. Portions of the graphene layer that are located under source and drain electrodes are not doped with ions and preserve the excellent electrical conduction property of graphene to provide electrical connection between the source and drain electrodes and the semiconductor layer.

An array substrate and a display device are provided. A gate insulating layer and a gate electrode are formed on a semiconductor layer in sequence, the gate insulating layer and the gate electrode are located in a middle position of the semiconductor layer and have a uniform shape and size. In a region on the semiconductor layer that is not covered by the gate insulating layer, there is further provided a metal diffusion layer. A barrier layer includes a portion covering the gate insulating layer and the gate electrode and a portion located around the semiconductor layer. A passivation layer covers the semiconductor layer, the gate insulating layer, the gate electrode and the barrier layer. Source and drain electrodes are connected to the metal diffusion layer respectively, and a pixel electrode contacts with the drain electrode.

The present invention provides a manufacture method of a black matrix. The COA technology is utilized to manufacture the organic photoresist blocks with a larger thickness on the alignment marks. Then, the black matrix thin film covers on the organic photoresist blocks to tremendously increase the level differences of the positions of the alignment marks and adjacent areas. Thus, the contour recognition apparatus is employed to accurately recognize positions of the alignment marks. The issue that the alignment marks are difficult to be recognized after the black matrix thin film is coated in the BOA process can be solved.