Patent classifications
H10D86/021
Thin Film Transistor, Display Including the Same, and Method of Fabricating the Same
A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.
DISPLAY SUBSTATE, MOTHER SUBSTRATE FOR MAKING THE SAME, AND FABRICATING METHOD THEREOF
The present application discloses a mother substrate comprising a first region comprising a plurality of display substrate units; and a second region; the first region comprises a buffer layer on and in contact with a base substrate, the second region comprises a mat layer on and in contact with the base substrate for reducing segment difference between the first region and the second region.
Array Substrate and Method Of Manufacturing the Same, Display Panel, and Display Device
An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.
Display and electronic unit
A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.
Array substrate and fabricating method thereof, and display apparatus
An array substrate and a fabricating method thereof and a display apparatus are provided. The array substrate comprises a base substrate, a pixel electrode layer formed on the base substrate, and a first wire grid polarizing film disposed on a surface of the pixel electrode layer, wherein the first wire grid polarizing film includes a plurality of first metal lines (L1) which are mutually parallel and are periodically arranged; the surface of the pixel electrode layer is a surface of the pixel electrode layer facing the base substrate or a surface of the pixel electrode layer opposite to the base substrate. The array substrate and the fabricating method thereof and the display apparatus can facilitate an ultrathin design.
Array substrate, method for manufacturing the same, liquid crystal display panel
The present invention provides an array substrate, a method for manufacturing the same, and a liquid crystal display panel. The array substrate includes a plurality of pixel units arranged in an array, each pixel unit comprising a reflection region and a transmission region, and for any pixel unit, the array substrate comprising a substrate; a thin film transistor provided on the substrate; and a reflection electrode and a first transparent electrode which are electrically connected with each other, the reflection electrode being located in the reflection region, and the first transparent electrode being located in the transmission region, wherein a first transparent insulation layer is provided between the reflection electrode and the first transparent electrode, and the reflection electrode is on a side of the first transparent insulation layer which is closer to the substrate.
Liquid crystal display panel, array substrate and manufacturing method for thin-film transistor
An LCD panel, an array substrate and a manufacturing method for TFT are disclosed. The method includes: providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer to form a gate electrode of a TFT; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer to form a source electrode and a drain electrode of the TFT. The present invention can inhibit hillock generated by the aluminum metal layer in a high temperature environment, avoid the short circuit generated among the gate, the source and the drain electrodes of the TFT to ensure the display quality of an image.
ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
An array substrate and a method of fabricating the same are disclosed. The method has the following steps of: fabricating a switch array layer on a substrate; forming a color resist layer having a red color filter, a green color filter and a blue color filter on the switch array layer, and a through hole in the color resist layer; forming a transparent conductive layer on the color resist layer; and forming a light shield layer on the transparent conductive layer.
PIXEL STRUCTURE OF LIQUID CRYSTAL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
A pixel structure of a liquid crystal display panel and a manufacturing method thereof are provided, the pixel structure adopts a tri-gate frame, and one thin film transistor and one storage capacitor are simultaneously formed during the manufacturing process. The storage capacitor has a first via and a second via to connect a first capacitor layer and a second capacitor layer of the storage capacitor. A main storage portion of the storage capacitor further includes a lower portion of a common line, so as to substantially increase the capacity of the storage capacitor and reduce a feed through effect produced by the parasitic capacitor of the liquid crystal display panel, and to improve the display quality of the panel.
DISPLAY PANEL, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
A display panel includes a display area configured to display an image, and a peripheral area adjacent to the display area. The peripheral area includes a pad area in which a plurality of output pads are disposed. The output pads are arranged in a matrix formed having M row*N column (M and N are normal numbers, M is 3 or larger than 3). Each of the output pads has a center of the output pad spaced apart from a center of an adjacent output pad by a distance D in a first direction. Each of the output pads is spaced apart from an adjacent output pad by a gap. Each of the output pads has a center of the output pad spaced apart from a center of an adjacent output pad by a pitch P in a second direction which is substantially perpendicular to the first direction. An equation P<D/(M-1) is satisfied.