The present application discloses a conductive layer in a semiconductor apparatus, comprising a metal sub-layer and an anti-reflective coating over the metal sub-layer for reducing light reflection on the metal sub-layer; wherein the anti-reflective coating comprises a light absorption sub-layer on the metal sub-layer for reducing light reflection by absorption and a light destructive interference sub-layer on a side of the light absorption layer distal to the metal sub-layer for reducing light reflection by destructive interference; and the metal sub-layer is made of a material comprising M1, wherein M1 is a single metal or a combination of metals; the light absorption sub-layer is made of a material comprising M2O.sub.aN.sub.b, wherein M2 is a single metal or a combination of metals, a>0, and b0; the light destructive interference sub-layer is made of a material comprising M3O.sub.c, wherein M3 is a single metal or a combination of metals, and c>0; the light absorption sub-layer has a refractive index larger than that of the light destructive interference sub-layer.

A high-resolution liquid crystal display device is provided. A liquid crystal display device with high aperture ratio is provided. A display device includes a liquid crystal element, a transistor, and an insulating layer. The transistor includes a semiconductor layer that transmits visible light. The semiconductor layer that transmits visible light includes a channel region and a low-resistance region. The channel region overlaps with a gate with a gate insulating layer therebetween. The low-resistance region includes a first portion that is in contact with a pixel electrode of the liquid crystal element and a second portion that is in contact with a side surface of an opening in the insulating layer.

Provided is a resin composition including a polyimide precursor that has exceptional adhesiveness to glass substrates and that does not generate particles during laser detachment. A resin composition containing (a) a polyimide precursor, (b) an organic solvent, and (d) an alkoxysilane compound, wherein the resin composition shows polyimide obtained by imidation of the (a) polyimide precursor after application of the resin composition to the surface of a support, the residual stress with the support is from 5 MPa to 10 MPa, and the 308 nm absorbance of the (d) alkoxysilane compound when made into a 0.001 mass % NMP solution is from 0.1 to 0.5 at a solution thickness of 1 cm.

Embodiments of the present invention provide an array substrate and a manufacturing method thereof and a touch display device. The array substrate comprises multiple data lines, multiple gate lines and multiple thin film transistors. The data lines and the gate lines intersect with each other in different planes to divide the array substrate into multiple pixel units, in each of which a thin film transistor is provided, wherein the array substrate further comprises multiple first touch sensing electrodes and multiple second touch sensing electrodes. The first touch sensing electrodes are provided below active regions of the thin film transistors and also serve as metal shielding layers for blocking light emitted by a backlight source. The first touch sensing electrodes and the second touch sensing electrodes intersect with each other in different planes, and capacitances are formed at intersections of the first touch sensing electrodes and the second touch sensing electrodes.

A structure and a method for obtaining capacitance in an array substrate are disclosed. The structure comprises a first conductive region, arranged in a same layer as a first conductive layer of said array substrate; a second conductive region, arranged in a same layer as a second conductive layer of said array substrate, wherein said second conductive region overlaps with said first conductive region partly or totally; a first measurement region, connected with said first conductive region; and a second measurement region, connected with said second conductive region. The capacitance of the corresponding capacitor of the sub pixel can be detected by the structure, thereby providing data basis for judging the performance and quality of the sub pixel and the liquid crystal display panel.

The present disclosure provides an array substrate for a display device and a manufacturing method thereof. A transparent electrode pattern (ITO) may be formed between a source/drain metal pattern and a passivation layer located above the source/drain metal pattern, which are formed in a passivation hole area of a non-active area of the array substrate. Accordingly, it may be possible to prevent display failure caused by a delamination phenomenon or peel-off of a material of the passivation layer due to the lack of adhesion strength between a metal layer and the passivation layer in the passivation hole area.

An organic light-emitting display apparatus includes a substrate including a display area and a non-display area disposed on one side of the display area, a line unit including a plurality of lines extending in one direction and disposed on the substrate in the non-display area, an insulating film disposed on the line unit and exposing one end of the line unit, and a metal layer disposed between the line unit and the insulating film.

A method of manufacturing a pixel structure includes: forming a source, a drain and a first capacitor electrode; forming a semiconductor layer in contact with a portion of the source and a portion of the drain; forming a gate and a second capacitor electrode, and the second capacitor electrode substantially aligned with the first capacitor electrode; forming a gate insulating layer between the semiconductor layer, the source, the drain and the first capacitor electrode, and the gate and the second capacitor electrode; forming a passivation layer over the source, the drain, the first capacitor electrode, the semiconductor layer, the gate and the second capacitor electrode; and forming a pixel electrode over the passivation layer, and the pixel electrode substantially aligned with the first capacitor electrode.

An active matrix substrate (10) includes a first line (101), a second line (102), a third line (103), a fourth line (104) and a fifth line (105) provided in a non-display region F. The first line crosses a non-input-side end portion of at least one bus line of a first bus line group with an insulating layer interposed therebetween. The second line crosses a non-input-side end portion of at least one bus line of a second bus line group with an insulating layer interposed therebetween. The third line crosses an input-side end portion of the first bus line group with an insulating layer interposed therebetween, and does not cross the second bus line group. The fourth line crosses an input-side end portion of the second bus line group with an insulating layer interposed therebetween, and does not cross the first bus line group. The fifth line is routed so as to cross the first, second, third and fourth lines with an insulating layer interposed therebetween. The third line and the fourth line are electrically separated from each other.

A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer.