A TFT display device and a method for producing the device are disclosed. The TFT display device includes: a first metal layer, on which a first silicon nitride film is deposited; a second metal layer deposited on the first silicon nitride film and etched to form a pattern, wherein a second silicon nitride film is deposited on the second metal film; and a via hole, wherein the first metal layer and/or the second metal layer are disconnected in the overlapping region. The first silicon nitride layer and the second silicon nitride layer are etched to form the via hole On the disconnected position, and an ITO conductive film is deposited to electrically connect the disconnected position. According to the present invention, by means of the above-mentioned way, the TFT display device will have less damage by ESD. The yield rate of the product is increased, and the product competitiveness is enhanced.

Manufacturing method including forming, over substrate, TFT layer, planarization layer, and display element in this order. Forming of TFT layer involves forming passivation layer to cover TFT layer electrode, such as upper electrode, and to come in contact with planarizing layer. Forming of display element involves forming bottom electrode to come in contact with planarizing layer. TFT layer electrode and bottom electrode are connected by: first forming, in planarizing layer, first contact hole exposing passivation layer at bottom thereof; then forming second contact hole exposing TFT layer electrode at bottom thereof through dry-etching passivation layer exposed at bottom of first contact hole using fluorine-containing gas; then forming liquid repellent film containing fluorine on passivation layer inner surface facing second contact hole; and forming bottom electrode along planarizing layer inner surface and passivation layer inner surface respectively facing first contact hole and second contact hole.

A display substrate includes a first switching element electrically connected to a gate line and that extends in a first direction and electrically connected to a data line that extends in a second direction crossing the first direction, an insulation layer disposed on the first switching element, a shielding electrode disposed on the insulation layer and a pixel electrode that partially overlap the shielding electrode. The shielding electrode includes a first portion that overlaps the data line and extends in the second direction and a second portion that overlaps the gate line and extends in the first direction.

An organic light emitting diode display device is disclosed which includes: scan, data and power lines crossing one another and arranged to define a pixel region; a switching thin film transistor disposed at an intersection of the scan and data lines; an organic light emitting diode disposed in the pixel region; a driving thin film transistor disposed between the power line and the organic light emitting diode; and a storage capacitor disposed adjacently to the organic light emitting diode and configured to charge a data signal which is applied from the data line. The storage capacitor includes a plurality of sub storage capacitors in which a plurality of storage electrodes are stacked alternately with one another.

A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide semiconductor layer on the transparent substrate; forming a patterned etch-stop layer made of an insulating material so as to cover at least a center portion of the island-shaped oxide semiconductor layer; depositing a conductive layer over an entire surface of the transparent substrate including a region over the patterned etch-stop layer; forming a patterned resist on the conductive layer; and etching the conductive layer using the patterned resist as a mask to form a patterned conductive layer from the conductive layer, wherein the patterned conductive layer includes a source electrode, a source wiring line, and a drain electrode, and continuing to etch the island-shaped oxide semiconductor thereunder using the patterned conductive layer and the patterned etch-stop layer as a mask to form a cutout in the island-shaped oxide semiconductor layer.

A novel semiconductor device where multilevel data can be written and read. The semiconductor device includes first to fifth transistors, a capacitor, a bit line, and a power supply line. Write operation is performed in such a manner that first data is supplied to a gate of the fifth transistor through the first transistor; the first transistor is turned off; second data is supplied to a second electrode of the capacitor through the second transistor to convert the first data into third data; and the second electrode of the capacitor are made electrically floating. The second electrode of the capacitor is initialized to GND through the third transistor. Read operation is performed by charging or discharging the bit line through the fourth transistor and the fifth transistor. The first to third transistors are preferably oxide semiconductor transistors.

A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.

A manufacturing method of an array substrate includes: providing a first substrate; forming a gate line, a data line, and a thin-film transistor array on the first substrate; forming a pixel electrode on the thin-film transistor array; depositing and forming a first passivation layer on the pixel electrode, the data line, and the thin-film transistor array; forming a black matrix on the first passivation layer; and forming a common electrode on the black matrix and the first passivation layer. The black matrix has a size that completely covers at least the data line such that when the common electrode is formed on the black matrix and the first passivation layer, a portion of the common electrode that corresponds exactly to the data line is completely spaced from the data line by the black matrix and the first passivation layer.

A thin film transistor array substrate includes a thin film transistor including a first gate electrode, an active layer, a source electrode, and a drain electrode. A first conductive layer pattern is on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode. An insulating layer is on the first conductive layer pattern and has an opening exposing a patterning cross-section of the first conductive layer pattern. A pixel electrode is on the insulating layer and is coupled to the source electrode or the drain electrode through a contact hole passing through the insulating layer. A diffusion prevention layer covers the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening.

Provided are a display device and a method of manufacturing the same. A display device comprises a display area, a non-display area, signal lines, and compensating capacitors. The display area and the non-display area are defined on a substrate. The signal lines are located within the display area, and their wiring lengths differ depending on location. The compensating capacitors are connected to at least one of the signal lines.