The present disclosure provides a method for fabricating an array substrate. The method includes providing a substrate; forming a first pattern on the substrate including a plurality of signal lines and a plurality of electrostatic discharge (ESD) lines, wherein an ESD line is configured to connect two signal lines; and removing a portion of each ESD line during a process for forming a second pattern over the first pattern to disconnect the two signal lines.

A method of manufacturing an array substrate includes: forming a first functional layer comprising a plurality of array substrate areas and connection areas between adjacent array substrate areas; forming a plurality of conductive portions within each of the array substrate areas, the plurality of conductive portions extending from a corresponding one of the array substrate areas to a corresponding one of the connection areas and terminals of the plurality of conductive portions being in connection with capacitor lines within the corresponding one of the connection areas such that two capacitor lines between two adjacent array substrate areas face each other and are formed into a first capacitor element; forming a plurality of second functional layers on the first functional layer formed with the plurality of conductive portions and the capacitor lines, for forming a plurality of array substrates; and performing a cutting process at the connection areas between adjacent array substrates and removing the capacitor lines between the adjacent array substrates so as to form a plurality of separate array substrates. The present disclosure further provides an array substrate manufactured by the method.

A display device includes: a substrate; a gate line disposed on the substrate and extending in a first direction; a data line insulated from the gate line and extending in a second direction intersecting the first direction; a pixel electrode disposed in a pixel region defined by the gate line and the data line; a source electrode connected to the data line; a drain electrode spaced apart from the source electrode; and a color filter layer disposed on the data line, the source electrode, and the drain electrode. The color filter layer includes: a first contact hole exposing the drain electrode, and a second contact hole disposed over at least one of the source electrode and the drain electrode. The pixel electrode is disposed on the color filter layer and is connected to the drain electrode through the first contact hole.

Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.

Manufacturing method including forming, over substrate, TFT layer, planarization layer, and display element in this order. Forming of TFT layer involves forming passivation layer to cover TFT layer electrode, such as upper electrode, and to come in contact with planarizing layer. Forming of display element involves forming bottom electrode to come in contact with planarizing layer. TFT layer electrode and bottom electrode are connected by: first forming, in planarizing layer, first contact hole exposing passivation layer at bottom thereof; then forming second contact hole exposing TFT layer electrode at bottom thereof through dry-etching passivation layer exposed at bottom of first contact hole using fluorine-containing gas; then forming liquid repellent film containing fluorine on passivation layer inner surface facing second contact hole; and forming bottom electrode along planarizing layer inner surface and passivation layer inner surface respectively facing first contact hole and second contact hole.

A pixel structure of a liquid crystal display panel and a manufacturing method thereof are provided, the pixel structure adopts a tri-gate frame, and one thin film transistor and one storage capacitor are simultaneously formed during the manufacturing process. The storage capacitor has a first via and a second via to connect a first capacitor layer and a second capacitor layer of the storage capacitor. A main storage portion of the storage capacitor further includes a lower portion of a common line, so as to substantially increase the capacity of the storage capacitor and reduce a feed through effect produced by the parasitic capacitor of the liquid crystal display panel, and to improve the display quality of the panel.

The present invention provides an array substrate structure and a manufacturing method thereof, in which after a common electrode (91) is formed, a reduction resistant layer (82) is first formed on the common electrode (91) before deposition of a second insulation layer (83) in order to prevent the film quality of the common electrode (91) from being affected by a reductive atmosphere generated in a process of directly depositing the second insulation layer (83) on the common electrode (91) thereby reducing the influence on the transmittal of the common electrode (91) caused by the deposition of the second insulation layer (83) on the common electrode (91) and providing the common electrode (91) with increased transmittal and enhancing displaying performance.

A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

A thin film transistor array substrate includes a pixel electrode layout area, a data electrode layout area, a transparent pixel electrode layer formed in the pixel electrode layout area, a first metal layer, a first dielectric layer, an amorphous silicon layer, a second metal layer, a second dielectric layer formed in the pixel electrode layout area and the data electrode layout area. The first dielectric layer covers the first metal layer. The amorphous silicon layer, the second metal layer and the second dielectric layer are sequentially formed on the first dielectric layer. The transparent pixel electrode layer is connected to the second metal layer through a via hole formed in the pixel electrode area of the second dielectric layer. Moreover, a method for manufacturing the thin film transistor array and a liquid crystal display including the thin film transistor array substrate also are provided.

A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.