Technology for converting electricity generated by photovoltaic cells to AC or DC output power is disclosed. In some examples of the disclosed technology, a zonal power inverter has a plurality of voltage converters, the outputs of the voltage converters being connected in series and being electrically isolated from one another except for their output terminals being connected in series. The power inverter can further comprise a DC/AC converter coupled to a positive output terminal of one of the voltage converters. In some examples, an isolated multi-junction photovoltaic cell includes a plurality of photosensitive semiconductor active layers, each of the active layers being electrically isolated from the other active layers, and formed from a respective material having a different band gap than the other active layers. In some examples, the multi-junction photovoltaic cell is coupled to the input of the zonal power inverter.

Technology for converting electricity generated by photovoltaic cells to AC or DC output power is disclosed. In some examples of the disclosed technology, a zonal power inverter has a plurality of voltage converters, the outputs of the voltage converters being connected in series and being electrically isolated from one another except for their output terminals being connected in series. The power inverter can further comprise a DC/AC converter coupled to a positive output terminal of one of the voltage converters. In some examples, an isolated multi-junction photovoltaic cell includes a plurality of photosensitive semiconductor active layers, each of the active layers being electrically isolated from the other active layers, and formed from a respective material having a different band gap than the other active layers. In some examples, the multi-junction photovoltaic cell is coupled to the input of the zonal power inverter.

An imaging device is provided to inhibit deterioration in imaging performance due to high-angle incident light. The imaging device includes a semiconductor substrate including a plurality of photoelectric conversion elements. The imaging device includes a plurality of color filters on the semiconductor substrate that face each of the plurality of photoelectric conversion elements. The imaging device further includes a partition wall on the semiconductor substrate that provides separation between one color filter and another color filter adjacent to each other among the plurality of color filters. The partition wall includes a first metal layer, a translucent first partition wall layer that covers a side surface of the first metal layer, and a translucent second partition wall layer located between the first metal layer and the first partition wall layer. A refractive index of the second partition wall layer is larger than a refractive index of the first partition wall layer.

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An n.sup.th photoelectric conversion unit segment is formed of an n.sup.th charge storage electrode segment, an n.sup.th insulating layer segment and an n.sup.th photoelectric conversion layer segment. As n increases, the n.sup.th photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to N.sup.th photoelectric conversion unit segment.

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An n.sup.th photoelectric conversion unit segment is formed of an n.sup.th charge storage electrode segment, an n.sup.th insulating layer segment and an n.sup.th photoelectric conversion layer segment. As n increases, the n.sup.th photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to N.sup.th photoelectric conversion unit segment.

Embodiments of the disclosure include a photovoltaic device comprising a plurality of photovoltaic cells coupled in series. The photovoltaic cells comprising a first contact layer, a first charge transport layer (CTL) disposed over the first contact layer, an absorber layer disposed over the first CTL, a second CTL disposed over the absorber layer; and a second contact layer disposed over the second CTL. Each photovoltaic cell in the plurality of photovoltaic cells includes a diode region, the diode region comprises a feature that extends through the absorber layer and comprises the first CTL and the second CTL.

Embodiments of the disclosure include a photovoltaic device comprising a plurality of photovoltaic cells coupled in series. The photovoltaic cells comprising a first contact layer, a first charge transport layer (CTL) disposed over the first contact layer, an absorber layer disposed over the first CTL, a second CTL disposed over the absorber layer; and a second contact layer disposed over the second CTL. Each photovoltaic cell in the plurality of photovoltaic cells includes a diode region, the diode region comprises a feature that extends through the absorber layer and comprises the first CTL and the second CTL.

A photovoltaic (PV) solar panel, made of many micro-PV cells, where each micro-PV cell has its own integrated, monolithic bypass diode. Each micro-PV cell is a multi-junction solar cell that is approximately 1 cm on a side. An array of approximately fifty micro-PV cells, all connected in series, makes up a single PV device, which generates 90-100 V at a low current. A PV solar panel includes multiple strings of these PV devices, connected in parallel, which generates a high photocurrent at 90-100 V. The multi-junction micro-PV cells can be made of stacked layers of Ge, GaAs, and InGaP PN.

An electrical connection is formed between first and second conductive elements, by inserting a nano-metal material between the first and second conductive elements; and heating the nano-metal material to a melting temperature to form the electrical connection between the first and second conductive elements. The nano-metal material may comprise a nano-metal paste or ink comprised of one or more of Gold (Au), Copper (Cu), Silver (Ag), and/or Aluminum (Al) nano-particles that melt or fuse into a solid to form the electrical connection, at a melting temperature of about 150-250 degrees C., and more preferably, about 175-225 degrees C. The electrical connection may be formed between a solar cell and a substrate by creating a via in the solar cell between a front and back side of the solar cell, wherein the via is connected to a contact on the front side of the solar cell and a trace on the substrate.

An electrical connection is formed between first and second conductive elements, by inserting a nano-metal material between the first and second conductive elements; and heating the nano-metal material to a melting temperature to form the electrical connection between the first and second conductive elements. The nano-metal material may comprise a nano-metal paste or ink comprised of one or more of Gold (Au), Copper (Cu), Silver (Ag), and/or Aluminum (Al) nano-particles that melt or fuse into a solid to form the electrical connection, at a melting temperature of about 150-250 degrees C., and more preferably, about 175-225 degrees C. The electrical connection may be formed between a solar cell and a substrate by creating a via in the solar cell between a front and back side of the solar cell, wherein the via is connected to a contact on the front side of the solar cell and a trace on the substrate.