The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject matter of the invention concerns a three dimensional field-effect transistor having a channel based on graphene foam and the use of ionic liquid as a gate. The graphene foam is made of a three-dimensional network of single and double layer graphene that extends in all the three dimensions. Metal contacts on either end of the graphene foam form the drain and source contacts of the transistor.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

A semiconductor device is provided. The semiconductor device includes a substrate, a contact layer, and an active layer. The contact layer is located on the substrate. The contact layer and a movable object perform a relative motion. The active layer is located between the contact layer and the substrate.

A switch includes a graphene structure extending longitudinally between a pair of electrodes and being conductively connected to both electrodes of said pair. First and second electrically conductive structures are laterally outward of the graphene structure and on opposing sides of the graphene structure from one another. Ferroelectric material is laterally between the graphene structure and at least one of the first and second electrically conductive structures. The first and second electrically conductive structures are configured to provide the switch into on and off states by application of an electric field across the graphene structure and the ferroelectric material. Other embodiments are disclosed, including components of integrated circuitry which may not be switches.

Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.

A device includes a substrate, a layer of graphene disposed over at least a portion of the substrate, at least one conductive trace proximate to the layer of graphene, one or more liquid metal contacts electrically connecting the layer of graphene and the at least one conductive trace, and an encasing material disposed over and enclosing the liquid metal contacts. The liquid metal contacts are in contact with a portion of the layer of graphene and an adjoining portion of the respective conductive trace. The liquid metal contacts may comprise a eutectic alloy in stable liquid form at between about 19 C. and about 1300 C., such as a gallium-based alloy. The conductive traces allow for external device connections and may be partially enclosed within the encasing material.

This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same materialgraphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.