A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

An array substrate is disclosed. The array substrate includes a substrate, a first film layer on a side surface of the substrate, an insulation layer on the side surface of the substrate, an electrostatic charge dispersion layer on the side surface of the substrate, and a second film layer arranged on the side surface of the substrate. The first film layer, the insulation layer, the electrostatic charge dispersion layer, and the second film layer are sequentially arranged on the substrate. In addition, the insulation layer and the electrostatic charge dispersion layer include via holes, the second film layer is electrically connected with the first film layer through the via holes, and the electrostatic charge dispersion layer is in a same profile as the second film layer.

A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.

The present invention provides a double-sided display substrate and a manufacturing method thereof and a display device. The double-sided display substrate includes several sub-pixel units, the sub-pixel unit includes a front side light-emitting layer provided for front side displaying, a back side light-emitting layer provided for back side displaying, a pixel electrode layer, a common electrode layer, and a driving transistor, and the front side light-emitting layer and the back side light-emitting layer are interposed between a corresponding pixel electrode layer and the common electrode layer, respectively, the common electrode layer corresponding to the back side light-emitting layer and/or the front side light-emitting layer is disposed in the same layer as a gate electrode layer of the driving transistor. According to the double-sided display substrate, quick manufacture and spread of the double-sided display substrate are realized.

The present invention discloses a TFT substrate and a display device. The TFT substrate comprises a scan line, a data line and a common electrode covering the scan line and the data line, wherein the data line and the scan line are disposed in a stagger, in order to divide the crosswise formed region into a plurality of pixel units; the common electrode comprises a plurality of common electrode units and a plurality of bridging portions overlapping with the scan lines and the data lines, wherein the common electrode unit and the pixel unit are correspondingly disposed, each bridging portion is connected with at least two adjacent common electrodes in order to make all of the common electrodes be electrically connected. Through the above ways, the present invention can reduce the RC constant and power consumption, thereby improving the product quality.

There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

An organic light emitting diode display device includes: a substrate; a scan line configured to transfer a scan signal; a data line and a driving voltage line configured to transfer a data voltage and a driving voltage, respectively; a switching transistor including a switching drain electrode configured to output the data voltage; a driving transistor including a driving gate electrode connected with the switching drain electrode; a storage capacitor including a first storage electrode connected with the driving gate electrode and a second storage electrode connected with the driving voltage line; and an organic light emitting diode connected with a driving drain electrode of the driving transistor. The storage capacitor includes: a connector in which an edge of the second storage electrode is offset from an edge of the first storage electrode in a direction toward the center of the second storage electrode, and a storage compensator facing the connector.

A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

An array substrate and a manufacturing method thereof are provided. The array substrate includes a substrate, an active layer, a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer. The array substrate includes a thin film transistor (TFT) area, and the second metal layer includes a source-drain metal sub-layer located in the TFT area. The TFT area is defined with an active layer exposed area. The array substrate includes a barrier layer, and an orthographic projection of the barrier layer on the active layer at least partially covers an orthographic projection of the active layer exposed area on the active layer.

A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.