A liquid crystal display includes a first pixel and a second pixel that extend in a data line direction. The first and second pixels are connected to a same data line, and the first pixel is closer to a data driver than the second pixel. A channel width of a thin film transistor of the first pixel is less than a channel width of a thin film transistor of the second pixel.

A manufacturing method of a TFT substrate structure is provided, in which a graphene layer is formed on a semiconductor layer and after the formation of a second metal layer, the second metal layer is used as a shielding mask to conduct injection of fluoride ions into the graphene layer to form a modified area in a portion of the graphene layer that is located on and corresponds to a channel zone of the semiconductor layer. The modified area of the graphene layer shows a property of electrical insulation and a property of blocking moisture/oxygen so as to provide protection to the channel zone. Portions of the graphene layer that are located under source and drain electrodes are not doped with ions and preserve the excellent electrical conduction property of graphene to provide electrical connection between the source and drain electrodes and the semiconductor layer.

A display device includes a pixel array section, the pixel array section having pixels arranged in a matrix form, at least one of the pixels including an electro-optical element, a write transistor, a capacitor, a drive transistor, and a switching transistor. A write scan line is disposed for each pixel row of the pixel array section and adapted to convey a write signal to be applied to a gate electrode of the write transistor. The wiring structure of the write scan line does not cross a wiring pattern connected to a gate electrode of the drive transistor.

Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.

The present invention provides a pixel unit and an array substrate. The pixel electrode includes four branch sections to divide the pixel zone into four display domains, helping improve the large angle color shifting problem of a display product and also simplifying the structure of the pixel electrode and making the manufacturing process simple, and facilitating the production of large-size wide-angle display products. The array substrate of the present invention is composed, in the horizontal direction, of multiple pixel units. The pixel units each include a pixel electrode that includes four branch sections to divide the pixel zone into four display domains, helping improve the large angle color shifting problem of a display product, and the pixel electrode has a simple structure to simplify the manufacturing process and facilitate the production of large-size wide-angle display products.

An integrated circuit (IC) includes a first semiconductor device on a glass substrate. The first semiconductor device includes a first semiconductive region of a bulk silicon wafer. The IC includes a second semiconductor device on the glass substrate. The second semiconductor device includes a second semiconductive region of the bulk silicon wafer. The IC includes a through substrate trench between the first semiconductive region and the second semiconductive region. The through substrate trench includes a portion disposed beyond a surface of the bulk silicon wafer.

A liquid crystal display device includes a TFT substrate and a counter substrate with liquid crystal sandwiched therebetween. The TFT substrate has scanning lines 10 extending in a first direction and arrayed in a second direction and video signal lines 20 extending in the second direction and arrayed in the first direction. The TFT substrate has a display area 500 in which TFT pixels are arrayed in a matrix pattern, and a frame area 600 surrounding the display area. In the frame area 600, common bus wires 521 are formed in the same layer and with the same material as the video signal lines 20 and are impressed with a common voltage. Dummy TFTs are formed in a layer under the common bus wires 521. The scanning lines 10, extending over the frame area 600, are divided outside the display area and are interconnected by bridging wires 170.

The invention provides a method for manufacturing a TFT substrate and a TFT substrate manufactured thereof. In the above TFT substrate, the low temperature poly-silicon layer is produced by solid phase crystallization, the cost of production is under budget, and the TFT substrate is a double-grid structure that can guarantee the electrical characteristics of the thin film transistor and better the capacity of drive, and leakage phenomenon caused by groove light seldom happens.

Provided is a semiconductor device including a first transistor having an oxide semiconductor film, an interlayer film over the first transistor, and second transistor located over the interlayer film and having a semiconductor film including silicon. The interlayer film can include an inorganic insulator. The semiconductor film including silicon can contain polycrystalline silicon. The interlayer film can include an inorganic insulator.

A display panel includes a first substrate, and the first substrate includes a base plate; a first conducive line disposed on the base plate and extending along the first direction; a second conducive line and a third conducive line disposed on the base plate and extending along the second direction; a contact pad positioned between the second and third conducive lines; a semi-conductive layer connecting the contact pad and the second conducive line, and the semi-conductive layer having a thickness d; and a pixel electrode connecting the contact pad. The semi-conductive layer has a channel width W (m) and a channel length L (m) between the contact pad and the second conducive line, and a pixel distance Px (m) between the second and third conducive lines along the first direction, wherein the channel width W is conformed to the following equation:

[00001]$\left(3.035-1.5\right)W-0.008\left(\frac{P_{x}L}{\sqrt{d}}\right)\left(3.035+1.5\right).$