A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe.sub.2) film and ultra-sharp SiO.sub.2 tips.

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe.sub.2) film and ultra-sharp SiO.sub.2 tips.

An illustrative optical measurement system includes a light source configured to emit a light pulse directed at a target. The optical measurement system further includes a control circuit configured to drive the light source with a current pulse comprising a non-linear rise, and a decline from a maximum output to zero having a duration within a threshold percentage of a total pulse duration of the current pulse.

The present invention relates to a water treatment system for removing at least some of ionic materials included in source water to provide soft water comprising less ionic materials than the source water to a demand source. The water treatment system may comprise: a filter module provided so as to remove at least some of ionic materials included in source water by means of an electrical force to discharge soft water; a supply channel provided so as to supply the source water to the filter module; a discharge channel provided so as to guide the soft water discharged from the filter module to a demand source; a circulation channel branched from the supply channel; a reclaim channel branched from the discharge channel; a connection channel branched from the reclaim channel and connected to the circulation channel; and a descaling part connected to the connection channel and provided so as to provide a descaling material for removing scale to the inside of the connection channel.

Structures including a single-photon avalanche diode and methods of forming such structures. The structure comprises a semiconductor substrate including a trench. The trench surrounds a portion of the semiconductor substrate. The structure further comprises a deep trench isolation region that includes a dielectric layer and a semiconductor layer inside the trench. The dielectric layer is disposed between a sidewall of the trench and the semiconductor layer. The structure further comprises an active device that includes a doped region in the semiconductor layer.

A photonic device includes a substrate, a P-type doped component disposed over the substrate, an N-type doped component disposed over the substrate, an optical absorption layer disposed over the substrate, and a charging layer disposed over the substrate. The optical absorption layer is disposed between the P-type doped component and the N-type doped component. The optical absorption layer and the substrate have different material compositions. A charging layer is disposed between the P-type doped component and the N-type doped component. The charging layer has a first side surface that is substantially linear. The first side surface is in direct contact with the optical absorption layer.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.