A method of making a bipolar transistor includes patterning a first photoresist over a collector region of the bipolar transistor, the first photoresist defining a first opening. The method further includes performing a first implantation process through the first opening. The method further includes patterning a second photoresist over the collector region, the second photoresist defining a second opening different from the first opening. The method further includes performing a second implantation process through the second opening, wherein a dopant concentration resulting from the second implantation process is different from a dopant concentration resulting from the first implantation process.

A p-type well is formed in a semiconductor substrate, and an n.sup.+-type semiconductor region and a p.sup.+-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n.sup.+-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p.sup.+-type semiconductor region are base semiconductor regions of the bipolar transistor. An electrode is formed on an element isolation region between the n.sup.+-type semiconductor region and the p.sup.+-type semiconductor region, and at least apart of the electrode is buried in a trench which is formed in the element isolation region. The electrode is electrically connected to the n.sup.+-type semiconductor region.

Semiconductor memory cells, array and methods of operating are disclosed. In one instance, a memory cell includes a bi-stable floating body transistor and an access device; wherein the bi-stable floating body transistor and the access device are electrically connected in series.

An insulated gate bipolar transistor (IGBT) includes a gate trench, an emitter trench, and an electrically insulative layer coupled to the emitter trench and the gate trench and electrically isolating the gate trench from an electrically conductive layer. A contact opening in the electrically insulative layer extends into the emitter trench and the electrically conductive layer electrically couples with the emitter trench therethrough. A P surface doped (PSD) region and an N surface doped (NSD) region are each located between the electrically conductive layer and a plurality of semiconductor layers of the IGBT and between the gate trench and the emitter trench. The electrically conductive layer electrically couples to the plurality of semiconductor layers through the PSD region and/or the NSD region.

There are disclosed herein various implementations of a latch-up free power transistor. Such a device includes an insulated gate situated adjacent to a conduction channel in the power transistor, an emitter electrode in direct physical contact with the conduction channel, and a collector electrode in electrical contact with the conduction channel. The power transistor also includes an emitter layer in contact with a surface of a semiconductor substrate adjacent the conduction channel.

A method of making a bipolar transistor includes forming an extrinsic base layer over an oxide layer on a substrate. After an emitter window is opened in the extrinsic base layer, a sidewall spacer is formed on the sidewall of the emitter window. After forming the sidewall spacer, the oxide layer may be etched away to expose the substrate and to form a cavity extending beneath the extrinsic base layer. Subsequently, a monocrystalline emitter is formed in the emitter window whereby a peripheral part of the monocrystalline emitter fills the cavity. An anneal is then performed to form an emitter diffusion region and a base link region of the bipolar transistor.

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor substrate and the sacrificial layer. A recess is formed within the stack. The recess extends through the stack to the semiconductor substrate so that the recess at least partially overlaps with a surface of the collector region of the semiconductor substrate. The collector region extends from a main surface of the semiconductor substrate into the substrate material. The method further comprises generating a base structure at the collector region and in the recess. The base structure contacts and covers the collector region within the recess of the sacrificial layer. The method further comprises generating an emitter structure at the base structure. The emitter structure contacts and at least partially covers the base structure within the recess of the sacrificial layer.

A semiconductor device includes a semiconductor substrate having an active layer in which an element region and a contact region are formed, a support substrate supporting the active layer, and a buried insulation layer interposed between the active layer and the support substrate. A transistor element is formed in the element region, the transistor element having a transistor buried impurity layer formed within the active layer. The semiconductor device further includes a substrate contact having a contact buried impurity layer formed within the contact region and a through contact extending from the surface of the active layer to the support substrate through the contact buried impurity and the buried insulation layer, the contact buried impurity layer being in the same layer as the transistor buried impurity layer.