A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

A method of detecting a change in current is provided which includes irradiating light on at least one photoelectric conversion material layer, and detecting an increased change in current generated in the photoelectric conversion material layer. A photoelectric conversion apparatus is also provided and includes a photoelectric conversion element including a photoelectric conversion material layer, and a current detection circuit electrically connected to the photoelectric conversion element. In the photoelectric conversion apparatus, the current detection circuit detects an increased change in current generated in the photoelectric conversion material layer.

A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Provided is an imaging apparatus includes: a substrate; a photoelectric conversion unit configured to generate a signal charge by photoelectric conversion; a contact wiring of a conductor electrically connected to the photoelectric conversion unit; a transistor including a control electrode, a first main electrode electrically connected to the contact wiring, and a second main electrode; a charge accumulating unit provided in the substrate and electrically connected to the second main electrode of the transistor; and a first switching unit configured to switch connection and disconnection between the control electrode and the first main electrode of the transistor.

A method for manufacturing a functional material including a porous metal complex with nanoparticles included therein, the method including a configuration of adding more than one particle constituent raw material constituting the nanoparticles and a porous metal complex to a solvent, and then synthesizing nanoparticles included in the porous metal complex by heating to a desired temperature. In addition, provided is an electronic component including an electronic component element using a functional material including a porous metal complex with nanoparticles included therein.

A photoconductor includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer, and a second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction.

The invention relates to a measuring system, comprising a substrate (10), which has a quantum dot layer (16), which is arranged on the substrate and which comprises an emission segment (30) having a first plurality of quantum dots (34), which first plurality has an average first energy gap, wherein the first plurality can emit radiation corresponding to the average first energy gap, wherein the quantum dot layer (16) comprises at least one absorption segment (32) having a second plurality of quantum dots (36) and the second plurality has an average second energy gap that is less than the average first energy gap so that radiation (60) emitted by the emission segment (30) can be absorbed by the at least one absorption segment (32).

The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.