An analyte-detection system has an optical waveguide with first and second cladding layers adjacent a core; a light source coupled to provide light to the waveguide; a photodetector such as a metal-semiconductor-metal, vertical PIN, or horizontal PIN photodetectors, the photodetector having an absorber configured to detect light escaping from the waveguide through the first cladding layer; multiple, separate, photocurrent collectors, where each photocurrent collector collects current from a separate portion of the photodetector absorber; and at least one current-sensing amplifier for receiving photocurrent. The photodetector absorber is an undivided absorber region for multiple photocurrent collectors. Either separate amplifiers are provided for each of the multiple photocurrent collection lines, or multiplexing logic couples selected photocurrent collectors to amplifiers, while coupling unselected photocurrent collectors to a bias generator.

The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

A semiconductor structure for use in single molecule real time DNA sequencing technology is provided. The structure includes a semiconductor substrate including a first region and an adjoining second region. A photodetector is present in the first region and a plurality of semiconductor devices is present in the second region. A contact wire is located on a surface of a dielectric material that surrounds the photodetector and contacts a topmost surface of the photodetector and a portion of one of the semiconductor devices. An interconnect structure is located above the first region and the second region, and a metal layer is located atop the interconnect structure. The metal layer has a zero waveguide module located above the first region of the semiconductor substrate. A DNA polymerase can be present at the bottom of the zero waveguide module.

According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.

The present disclosure provides embodiments for diodes, devices, and methods for polar vapor sensing. One embodiment of a diode includes a first electrode to which an electric field is applied; a second electrode to which the electric field is applied; and a vapor gap region between the first electrode and the second electrode. A total capacitance measured between the first electrode and the second electrode varies based on presence of a polar vapor species on at least a portion of an electrode surface of at least one of the first electrode and the second electrode.

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region spaced apart from the first region by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.