An electronic device includes a display panel including a first region corresponding to an electronic module, a second region which extends from the first region, and a third region which is spaced apart from the first region with the second region therebetween, and a protective layer facing the display panel at the second region and the third region. The protective layer includes a first protective part including an ultraviolet curable resin, the first protective part being adjacent to the first region and overlapping the second region, and a second protective part including a heat radiating material, the second protective part being adjacent to the second region and overlapping the third region.

The present inventive concept relates to an RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures, and a manufacturing method thereof. The RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures includes an n-type contact electrode layer, a first light-emitting structure, a common electrode layer, a second light-emitting structure, a tunnel junction layer, and a third light-emitting structure, which are sequentially stacked on a substrate. The RGB micro-light-emitting diode with a reduced unit area can be easily manufactured by forming the corner mesa contact structure on each of the n-type contact electrode layers by etching the vertically-stacked structure, forming contact structures on the n-type contact electrode layers, followed by electrical connection.

In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Disclosed is a display substrate including: a base substrate; a plurality of light-emitting devices arranged in an array on the base substrate; a plurality of photosensitive devices between the layer including the light-emitting devices and the base substrate, the orthographic projections of the photosensitive devices on the base substrate overlapping the orthographic projections of the gaps between adjacent light-emitting devices; a black matrix on the side of the layer including the light-emitting devices away from the base substrate, the orthographic projection of the black matrix on the base substrate overlapping the orthographic projections of the gaps between the adjacent light-emitting devices, the black matrix having a plurality of first openings, the orthographic projections of the first openings on the base substrate overlapping the orthographic projections of the photosensitive devices, and the total amount of light irradiated to the photosensitive devices through the first openings meeting a requirement.

Embodiments provide a window and a display device including the window. The window includes a substrate; at least one light control layer disposed on the substrate and, which controls light having a wavelength of about 280 nm or less; and a coating layer disposed on the at least one light control layer.

A display device includes a bank pattern disposed on a substrate, a first electrode pattern disposed on the bank pattern, a light-emitting element disposed on the first electrode pattern to be electrically connected to the first electrode pattern, a second electrode pattern configured to cover the light-emitting element, an inorganic insulating layer configured to cover the bank pattern, the first electrode pattern, and the light-emitting element between the first electrode pattern and the second electrode pattern, and a diffusion layer which includes a plurality of diffusion particles and is in contact with the inorganic insulating layer.

A light-emitting diode includes: a substrate, an epitaxial layer and a protective layer; the epitaxial layer is disposed on the substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially in that order; the protective layer covers the epitaxial layer; the epitaxial layer is divided into chiplets, each chiplet includes transverse and longitudinal sidewalls intersecting in transverse and longitudinal directions, dicing channels are defined between adjacent chiplets, the dicing channels include transverse and longitudinal dicing channels extending respectively in the transverse and longitudinal directions, the protective layer covers the dicing channels and chiplet sidewalls, a patterned structure is disposed on the protective layer in an intersecting area of the transverse and the longitudinal dicing channels, and includes a groove extending toward the substrate. The light-emitting diode effectively prevents the crack extension, avoids edge and corner chipping during dicing, thus ensuring element quality.

A display device includes a substrate having a pixel electrode, a light emitting element disposed on the pixel electrode and including a first semiconductor layer, an active layer, and a second semiconductor layer, a step coverage prevention layer surrounding the light emitting element in a plan view, a common electrode disposed on the light emitting element and the step coverage prevention layer, and an oxidation prevention layer disposed on a portion of the common electrode that does not overlap the light emitting element in a thickness direction. The common electrode includes a first portion disposed on the light emitting element and a second portion disposed between the oxidation prevention layer and the step coverage prevention layer, and a material forming the first portion is an oxide of a material forming the second portion.

A display apparatus according to an exemplary embodiment is disclosed. A display apparatus according to an exemplary embodiment includes a substrate having a bending region between an active area and a pad area. The display apparatus includes a planarization film on the active area and the pad area in the substrate. The display apparatus includes a first organic film coated on the planarization film, a second organic film coated on the first organic film, and a third organic film coated on the second organic film. The third organic film is formed such that an upper surface thereof is flattened in the active region. The display apparatus includes a plurality of light-emitting elements disposed on the third organic film.

A light emitting diode includes a semiconductor stack layer, an insulative barrier layer, and a metal protective layer. The semiconductor stack layer includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The insulative barrier layer is disposed on a lower surface of the semiconductor stack layer and has a first opening corresponding to a lower side of the first semiconductor layer. The metal protective layer is disposed on the lower surface of the semiconductor stack layer and connected to the insulative barrier layer. A portion of the metal protective layer is filled in the first opening. Vertical projection points of edge endpoints of an upper surface of the insulative barrier layer on a horizontal plane are distributed within a vertical projection first connecting line section of edge endpoints of an upper surface of the metal protective layer on the horizontal plane.