A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

A surface mount emissive element is provided with a top surface and a bottom surface. A first electrical contact is formed exclusively on the top surface, and a second electrical contact is formed exclusively on the top surface. A post extends from the bottom surface. An emissive display is also provided made from surface mount emissive elements and an emissions substrate. The emissions substrate has a top surface with a first plurality of wells formed in the emissions substrate top surface. Each well has a bottom surface, sidewalls, a first electrical interface formed on the bottom surface, and a second electrical interface formed on the bottom surface. The emissions substrate also includes a matrix of column and row conductive traces forming a first plurality of column/row intersections, where each column/row intersection is associated with a corresponding well. A first plurality of emissive elements populates the wells.

A display device including a pixel electrode portion electrically connected to a thin film transistor; a semiconductor light emitting device configured to emit light to form an individual pixel, and including a conductive electrode; a conductive adhesive layer adhered to the semiconductor light emitting device, and configured to electrically connect the pixel electrode portion to the conductive electrode; and a buffer layer including an elastic material to protect the thin film transistor, and disposed between the thin film transistor and the conductive adhesive layer.

The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180 , and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.

A chip substrate includes at least one insulation portion interposed between conductive portions. A cavity formed in a recessed shape from a region of an upper surface of the chip substrate exposes a top surface of a part of the at least one insulation portion. An insulation layer is coated on the upper surface of the chip substrate excluding the region of the cavity. A bump may be formed at a predetermined height within the cavity.