A display device in accordance with some embodiments may include a base layer, a first bank pattern and a second bank pattern on the base layer, and spaced apart from each other in a first direction, a first electrode overlapping the first bank pattern, a second electrode overlapping the second bank pattern, and a light emitting element aligned between the first electrode and the second electrode, wherein a distance between an end of the first electrode and an end of the first bank pattern differs from a distance between an end of the second electrode and an end of the second bank pattern in the first direction.

A display device in accordance with some embodiments may include a base layer, a first bank pattern and a second bank pattern on the base layer, and spaced apart from each other in a first direction, a first electrode overlapping the first bank pattern, a second electrode overlapping the second bank pattern, and a light emitting element aligned between the first electrode and the second electrode, wherein a distance between an end of the first electrode and an end of the first bank pattern differs from a distance between an end of the second electrode and an end of the second bank pattern in the first direction.

A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.

A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.

An array substrate and a display panel are provided, the array substrate is disposed on the base substrate, and a passivation layer is formed on a side of the array substrate layer away from the base substrate. The passivation layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer stacked in sequence, the first dielectric layer is disposed close to the array layer and the third dielectric layer is disposed away from the array layer, a refractive index of the first dielectric layer is different from a refractive index of the second dielectric layer, and the refractive index of the second dielectric layer is different from a refractive index of the third dielectric layer.

An array substrate and a display panel are provided, the array substrate is disposed on the base substrate, and a passivation layer is formed on a side of the array substrate layer away from the base substrate. The passivation layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer stacked in sequence, the first dielectric layer is disposed close to the array layer and the third dielectric layer is disposed away from the array layer, a refractive index of the first dielectric layer is different from a refractive index of the second dielectric layer, and the refractive index of the second dielectric layer is different from a refractive index of the third dielectric layer.