A light-emitting semiconductor structure includes a substrate, an anode electrode, an epitaxial structure, a gate electrode, and a cathode electrode. The anode electrode is disposed on a lower surface of the substrate. The epitaxial structure is disposed on an upper surface of the substrate. The epitaxial structure includes a first P-type semiconductor layer, a first N-type semiconductor layer, a second P-type semiconductor layer, a second N-type semiconductor layer and a light-emitting layer. The first P-type semiconductor layer is disposed on the upper surface of the substrate. The first N-type semiconductor layer is disposed on the first P-type semiconductor layer. The second P-type semiconductor layer is disposed on the first N-type semiconductor layer. The second N-type semiconductor layer is disposed on the second P-type semiconductor layer. The light-emitting layer is disposed between the second P-type semiconductor layer and the second N-type semiconductor layer.

A display device and a manufacturing method thereof are discussed. The display device can include a substrate in which a plurality of sub pixels is defined, and a light emitting diode which is disposed in each of the plurality of sub pixels and has a first uneven structure, the light emitting diode includes a first semiconductor layer which has a first uneven structure formed on a bottom surface, an emission layer on the first semiconductor layer, a second semiconductor layer on the emission layer, a first electrode disposed on at least a part of a side surface of the first semiconductor layer, and a second electrode disposed on the second semiconductor layer. Accordingly, the first uneven structure is formed below the light emitting diode to improve the light extraction efficiency of the light emitting diode.

The present specification provides a semiconductor light emitting element having a new structure with a wider light emitting area than a conventional structure, when implementing a display device by using semiconductor light emitting elements. A semiconductor light emitting element according to one embodiment of the present invention is characterized by comprising: a first conductive-type semiconductor layer having a first side inclination angle; a second conductive-type semiconductor layer having a second side inclination angle, which is positioned on the first conductive-type semiconductor layer; and an active layer having a third side inclination angle, which is disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, wherein the second side inclination angle and the third side inclination angle are the same.

The present invention relates to a method for manufacturing a microdisplay panel in which a process for aligning LED stacks and CMOS electrode pads is not required, the method comprising: a first step of preparing a support wafer and a front wafer disposed on the support wafer and including a light-emitting portion in which a group 3-5 compound semiconductor is epitaxially grown, and preparing a back wafer having a plurality of CMOS electrode pads aligned on the upper surface thereof; a second step of bonding the front wafer to the back wafer through a bonding layer so that the light-emitting portion faces the CMOS electrode pads, and then removing the support wafer; and a third step of etching the light-emitting portion and the bonding layer to separate same in preset units, whereby the plurality of LED stacks are respectively aligned on the plurality of CMOS electrode pads.

Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.

The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 m and 3.0 m inclusive.

The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2.

In an embodiment an optoelectronic semiconductor device includes at least one semiconductor layer stack having an active region and one or more side surfaces, wherein the active region extends to the one or more side surfaces and a regrowth semiconductor layer covering the active region at the one or more side surfaces, wherein the at least one semiconductor layer stack is free of etching traces at the one or more side surfaces.

A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.