Disclosed is a flexible electronic device having an adhesive function, including an adhesive tape that includes a flexible film and an adhesive layer formed on one side of the flexible film, and an electronic device formed on a remaining side of the flexible film of the adhesive tape. Accordingly, the flexible electronic device of the present invention is transferred on a surface of various flexible materials or materials having a curved surface so as to freely adhere and minimize breakage of the electronic device and maintain performance over a long period of time, even if the substrate is modified or repeatedly bent.

A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.

Methods of intercalating an insulating layer between a metal catalyst layer and a graphene layer and methods of fabricating a semiconductor device using the intercalating method are provided. The method of intercalating the insulating layer includes forming the graphene layer on the metal catalyst substrate, intercalating nitrogen ions between the metal catalyst substrate and the graphene layer, and forming the insulating layer between the metal catalyst substrate and the graphene layer by heating the metal catalyst substrate to chemically combine the nitrogen ions with the metal catalyst substrate.

In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.

A high frequency semiconductor amplifier includes an input circuit, a first semiconductor element, first bonding wires, an interstage circuit, second bonding wires, a second semiconductor element, third bonding wires, an output circuit, fourth bonding wires and a package. The input circuit includes a first DC blocking capacitor, an input transmission line, a first input pad part, and a first bias circuit. The interstage circuit includes a second DC blocking capacitor, an interstage transmission line, a first output pad part, and a second bias circuit, a microstrip line divider, and a second input pad part. The output circuit includes a second output pad part, a microstrip line combiner, a third DC blocking capacitor, an output transmission line, and a fourth bias circuit. The first and second semiconductor elements, the input circuit, the interstage circuit, and the output circuit are bonded to the package.

A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region; a recess extending from the first surface in the edge region into the semiconductor body, the recess comprising at least one sidewall; a dielectric filling the recess. In the dielectric, a dielectric number, in the lateral direction, decreases as a distance from the first sidewall increases.

A semiconductor device according to the embodiments includes a SiC layer having a first plane, an insulating layer, and a region between the first plane and the insulating layer, the region including at least one element in the group consisting of Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), and Ba (barium), a full width at half maximum of a concentration peak of the element being equal to or less than 1 nm, and when a first area density being an area density of Si (silicon) and C (carbon) including a bond which does not bond with any of Si and C in the SiC layer at the first plane and a second area density being an area density of the element, the second area density being equal to or less than of the first area density.

A semiconductor device includes: a semiconductor substrate; a device region on the semiconductor substrate; a planar edge termination region on the semiconductor substrate to surround the device region; and a passivation film covering the edge termination region, wherein the passivation film includes a semi-insulating film directly contacting the semiconductor substrate.

A method and structure for providing high-quality transferred graphene layers for subsequent device fabrication includes transferring graphene onto a hydrophobic surface of a hydrophobic layer and performing a thermal treatment process. In various embodiments, a substrate including an insulating layer is provided, and a hydrophobic layer is formed over the insulating layer. In some examples, a graphene layer is transferred onto the hydrophobic layer. By way of example, the transferred graphene layer has a first carrier mobility. In some embodiments, after transferring the graphene layer, an annealing process is performed, and the annealed graphene layer has a second carrier mobility greater than the first carrier mobility.