A semiconductor device includes a body zone in a semiconductor mesa, which is formed between neighboring control structures that extend from a first surface into a semiconductor body. A drift zone forms a first pn junction with the body zone. In the semiconductor mesa, the drift zone includes a first drift zone section that includes a constricted section of the semiconductor mesa. A minimum horizontal width of the constricted section parallel to the first surface is smaller than a maximum horizontal width of the body zone. An emitter layer between the drift zone and the second surface parallel to the first surface includes at least one first zone of a conductivity type of the drift zone.

In a plan view of a semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front surface of the semiconductor substrate, a pillar contacting area in which the pillar region is in contact with a deeper side of the anode contact region, and an anode contacting area in which the anode region is in contact with the deeper side of the anode contact region. In a direction along which the pillar contacting area and the anode contacting area are aligned, a width of the pillar contacting area is smaller than a width of the anode contacting area.

A method of manufacturing a semiconductor device includes forming electrode trenches in a semiconductor substrate between semiconductor mesas that separate the electrode trenches, the semiconductor mesas including portions of a drift layer of a first conductivity type and a body layer of a second, complementary conductivity type between a first surface of the semiconductor substrate and the drift layer, respectively. The method further includes forming isolated source zones of the first conductivity type in the semiconductor mesas, the source zones extending from the first surface into the body layer. The method also includes forming separation structures in the semiconductor mesas between neighboring source zones arranged along an extension direction of the semiconductor mesas, the separation structures forming partial or complete constrictions of the semiconductor mesa, respectively.

A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a contact at a second side of the semiconductor substrate opposite to the first side.

A manufacturing method of a semiconductor device includes: forming a mark on a surface of a semiconductor wafer, at least a part of the mark being disposed in a planned-peripheral region, the planned-peripheral region being located around a respective planned-element region where a semiconductor element is to be formed; forming the semiconductor element in the planned-element region using the mark; forming a film that extends across a range including the planned-element region or the planned-peripheral region in the surface so as to cover at least a part of the mark with the film, after forming the semiconductor element; and after forming the film, cutting the semiconductor wafer along a dicing region, the dicing region located around the planned-peripheral region.

A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.

A semiconductor device comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; an insulating portion provided on the first semiconductor region; a third semiconductor region of the second conductivity type provided on the second semiconductor region and having a hicher carrier concentration of the second conductivity type than that of the second semiconductor region; and a first electrode provided on the insulating portion and the third semiconductor region, the first electrode having a portion which is aligned with the second semiconductor region in a second direction perpendicular to a first direction being from the first semiconductor region to the second semiconductor region, and the first electrode being in contact with the second semiconductor region and the third semiconductor region.

A method for producing a semiconductor component includes providing a semiconductor body having a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench. The method further includes forming a second insulation layer on the first surface having a recess that overlaps in a projection onto the first surface with the at least one trench, forming a mask region in the recess, etching the second insulation layer selectively to the mask region, depositing a third insulation layer over the first surface, and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface.

A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.

A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.