The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission originating from highly localized carriers in Ga-rich regions formed in the active region, with nearly constant emission peak with increasing current density up to 200 A/cm.sup.2, due to the strong charge carrier confinement related to the presence of nanoclusters (e.g., Ga-rich) and radiative emission originating from highly localized carriers in Ga-rich regions formed in the active region.

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped In.sub.xAl.sub.(1-x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is a positive number smaller than 0.5. The transparent top electrode covers and is in contact with the n-doped In.sub.xAl.sub.(1-x)N layer. A refractive index of the n-doped In.sub.xAl.sub.(1-x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped In.sub.xAl.sub.(1-x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

A light emitting element includes: a first light emitting part including: a first nitride semiconductor layer containing a first conductivity type impurity, a second nitride semiconductor layer containing a second conductivity type impurity, and a first active layer positioned between the first nitride semiconductor layer and the second nitride semiconductor layer; a second light emitting part positioned above the second nitride semiconductor layer, the second light emitting part including: a third nitride semiconductor layer, a fourth nitride semiconductor layer containing a second conductivity type impurity, and a second active layer positioned between the third nitride semiconductor layer and the fourth nitride semiconductor layer. The third nitride semiconductor layer includes: a first layer that contains at least one selected from the group consisting of Be, Mg, Ca, Fe, Zn, and C, a second layer, and a third layer.

A light emitting element includes a bonding electrode, and a light emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed each other on the bonding electrode. At least one protrusion structure is defined on an upper surface of the light emitting stack, and the protrusion structure includes a first protrusion protruding in a direction away from the bonding electrode and defining a groove concave in a direction facing the bonding electrode, and a second protrusion protruding in a direction away from the bonding electrode in the groove of the first protrusion.

A method for manufacturing a flip-chip light emitting diode includes providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, and the semiconductor structure includes a current conductive layer with a bonding surface and defines a first electrode projection area and a second electrode projection area; performing a diffusion process toward the bonding surface by a diffusion material to form at least one path area with a high doping concentration in the current conductive layer; performing a bonding process to bond a second substrate to the bonding surface; and removing the first substrate and forming a first electrode and a second electrode on a side of the semiconductor structure adjacent to the first substrate. A position of the first electrode corresponds to the first electrode projection area, and a position of the second electrode corresponds to the second electrode projection area.

A light emitting element includes a first semiconductor layer doped with a first conductivity type, a stress relief layer disposed on the first semiconductor layer, the stress relief layer including an indium-containing layer containing a nitride-based semiconductor material containing indium, and doped with the first conductivity type, a light emitting layer disposed on the stress relief layer, the light emitting layer including a quantum well layer containing a nitride-based semiconductor material containing indium in a composition greater than or equal to an indium composition of the indium-containing layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type, the indium composition of the indium-containing layer is in a range of about 30% to about 100% of an indium composition of the quantum well layer.

A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

A display device includes: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; an amorphous silicon layer on the first alignment electrode and the second alignment electrode, the amorphous silicon layer having an insulating portion covering the first alignment electrode and an electrode portion covering the second alignment electrode, the electrode portion of the amorphous silicon layer including an N-type dopant; a light emitting element on the amorphous silicon layer, one end of the light emitting element being on the insulating portion and another end of the light emitting element contacting the electrode portion of the amorphous silicon layer; a first insulating layer on the light emitting element and extending in the first direction; and a first electrode contacting the one end of the light emitting element.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9d0.2N+2.0 and 10N+40x10N+60 are satisfied.