A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205X0.495 and 0.265Y0.450 in CIE color coordinates (X, Y).

A light-emitting element according to the present disclosure includes an anode, a hole transport layer, and a light-emitting layer containing a quantum dot, and a cathode in this order, and the hole transport layer includes an n+-type semiconductor layer, and a p+-type semiconductor layer adjacent to the n+-type semiconductor layer and disposed closer to the light-emitting layer than the n+-type semiconductor layer.

There is provided a large-diameter Group-III element nitride semiconductor substrate including a first surface and a second surface, in which, despite its large diameter, variations in quality in the first surface are suppressed. A Group-III element nitride semiconductor includes: a first surface; and a second surface, wherein the Group-III element nitride semiconductor substrate has a diameter of 100 mm or more, and wherein the Group-III element nitride semiconductor substrate has a coefficient of variation of a yellow luminescence intensity in a range corresponding to 88% or more of an entire region of the first surface of 0.3 or less based on a photoluminescence spectrum obtained through photoluminescence measurement of a range of the entire region of the first surface.

A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Eg.sub.n, a bandgap of Eg.sub.1, a bandgap of Eg.sub.2, a bandgap of Eg.sub.3 and a bandgap of Eg.sub.a which satisfy a relationship of Eg.sub.nEg.sub.1>Eg.sub.2>Eg.sub.3>Eg.sub.a.

A method of manufacturing a transfer die for use in a transfer print process. The manufactured transfer die comprises a semiconductor device suitable for bonding to a silicon-on-insulator wafer. The method comprises the steps of providing a non-conductive isolation region in a semiconductor stack, the semiconductor stack comprising a sacrificial layer above a substrate; and etching an isolation trench into the semiconductor stack from an upper surface thereof, such that the isolation trench extends only to a region of the semiconductor stack above the sacrificial layer. The isolation trench and the non-conductive isolation region together separate a bond pad from a waveguide region in the optoelectronic device.

A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.

A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.

Methods of fabricating single photon emitters (SPEs) including nanoindentation of hexagonal boron nitride (hBN) host materials and annealing thereof, devices formed from such methods, and chips with a single photon emitter. A substrate with a layer of hBN is provided. Nanoindentation is performed on the layer of hBN to produce an array of sub-micron indentations in the layer of hBN. The layer of hBN is annealed to activate SPEs near the indentations. Devices include a substrate with an SPE produced in accordance with the methods. Chips include a substrate, an hBN layer, and an SPE including an indentation on the hBN layer, in which the substrate is not damaged at the indentation.

A semiconductor light-emitting device includes a semiconductor stack, which includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. The semiconductor stack contains an n-type impurity that has a concentration profile along a thickness direction. The concentration profile includes a first segment, a second segment and a third segment. The N-type semiconductor layer has an X region, a Y region, and a Z region. The first segment corresponds to the X region and indicates a first concentration of the n-type impurity in the X region, the third segment corresponds to the Y region and indicates a second concentration of the n-type impurity in the Y region, and the second segment corresponds to the Z region and indicates a third concentration of the n-type impurity in the Z region. A light-emitting apparatus including the aforesaid semiconductor light-emitting device is also provided.