The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100). The growth conditions are chosen out of the group Arsenic partial pressure, Oxygen partial pressure, deposition temperature, total deposition pressure and deposition rate of Aluminum. The invention further relates to a corresponding method of manufacturing such a light emitting semiconductor device (100).

A light emitting device includes an active layer capable of producing light when current is injected thereinto, a first cladding layer and a second cladding layer that sandwich the active layer, a first electrode electrically connected to the first cladding layer, and a second electrode electrically connected to the second cladding layer. The active layer forms an optical waveguide that guides the light produced in the active layer. The optical waveguide has a window section that is provided in an end portion of the optical waveguide and has a band gap wider than the band gap of the active layer. The carrier concentration of a first layer provided between the window section and the second electrode is lower than the carrier concentration of the second cladding layer.

A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

A light emitting device includes a semiconductor light emitting structure including, a first semiconductor layer including a plurality of pores, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer, a plurality of quantum dots provided in the plurality of pores, and an external passivation layer at least partially surrounding a sidewall of the semiconductor light emitting structure, where the plurality of quantum dots are provided between the plurality of pores and the external passivation layer.

A nitride semiconductor light emitting element includes: a first n-type semiconductor layer, a first p-type semiconductor layer disposed above and in contact with the first n-type semiconductor layer; a first superlattice layer disposed above the first p-type semiconductor layer and containing a p-type impurity; an active layer disposed above the first superlattice layer, a second n-type semiconductor layer disposed above the active layer; a first electrode electrically connected to the first n-type semiconductor layer; and a second electrode electrically connected to the second n-type semiconductor layer.

In an embodiment a semiconductor chip includes a semiconductor body having a first region, a second region, and an active region between the first region and the second region, indentations in the first region, a TCO material in the indentations and a carrier, wherein the indentations of the first region are arranged on a side of the first region facing away from the carrier, and wherein the TCO material is flush with a surface of the first region facing away from the active region.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A method of porosification of a structure including a base substrate covered with (Al,In,Ga)N/(Al,In,Ga)N mesas, including a porosification step during which the (Al,In,Ga)N/(Al,In,Ga)N mesas are electrochemically porosified, during the porosification step, the structure further comprises, between the mesas or between groups of mesas, electrically-conductive lines covered with an electrically-insulating element.

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.