A solar cell includes: a silicon substrate; a first semiconductor layer and a second semiconductor layer provided on the silicon substrate, the first semiconductor layer being doped with an N-type conductive element, and the second semiconductor layer being doped with a P-type conductive element; a first electrode electrically connected to the first semiconductor layer through a plurality of first conductive structures; and a second electrode electrically connected to the second semiconductor layer through a plurality of second conductive structures; wherein a density of the plurality of first conductive structures is greater than a density of the plurality of second conductive structures.

A Tunnel Oxide Passivated Contact (TOPCon) solar cell, and a method therefor are provided. The TOPCon solar cell includes: a silicon substrate; a tunneling layer formed on a surface of the silicon substrate; a polycrystalline silicon layer formed on a surface of the tunneling layer; a polycrystalline germanium layer formed on a surface of the polycrystalline silicon layer; a lower passivation layer formed on a surface of the polycrystalline germanium layer; and a lower electrode formed on the lower passivation layer and electrically connected to the polycrystalline germanium layer.

A Tunnel Oxide Passivated Contact (TOPCon) solar cell, and a method therefor are provided. The TOPCon solar cell includes: a silicon substrate; a tunneling layer formed on a surface of the silicon substrate; a polycrystalline silicon layer formed on a surface of the tunneling layer; a polycrystalline germanium layer formed on a surface of the polycrystalline silicon layer; a lower passivation layer formed on a surface of the polycrystalline germanium layer; and a lower electrode formed on the lower passivation layer and electrically connected to the polycrystalline germanium layer.

A solar cell is provided, including a substrate having a first surface and a second surface, the first surface having a textured structure including protrusion structures, at least one doped semiconductor layer each formed over one of the first surface and the second surface, at least one passivation film each formed on a respective doped semiconductor layer, and electrodes penetrating a respective passivation film to be in electrical contact with the respective doped semiconductor layer. Each doped semiconductor layer has a surface facing away from the substrate and provided with recesses, and each recess has a size that is smaller than a size of any of the protrusion structures. Each passivation film has at least one portion formed in at least one of the recesses, and each electrode has at least one portion formed in at least one of the recesses.

Photovoltaic cells including a first group-IV subcell including an n-type emitter layer comprising a first group-IV material selected from a first group consisting of Ge, SiGe and SiGeSn, and a second layer comprising a second group-IV material, the second group-IV material being different from the first group-IV material, and the n-type emitter layer being the primary photoabsorber of the first group-IV subcell. A p-n junction of the first group-IV subcell is formed at a heterojunction of the n-type emitter layer and second layer. The photovoltaic cell also includes a tunnel junction, and a second group-IV subcell, the tunnel junction interconnecting the first group IV subcell to the second group-IV subcell, the first group IV subcell and the second group IV subcell being a lowest two subcells of the photovoltaic cell, the first group IV subcell being between the second group-IV subcell and a plurality of HI-V subcells.

Photovoltaic cells including a first group-IV subcell including an n-type emitter layer comprising a first group-IV material selected from a first group consisting of Ge, SiGe and SiGeSn, and a second layer comprising a second group-IV material, the second group-IV material being different from the first group-IV material, and the n-type emitter layer being the primary photoabsorber of the first group-IV subcell. A p-n junction of the first group-IV subcell is formed at a heterojunction of the n-type emitter layer and second layer. The photovoltaic cell also includes a tunnel junction, and a second group-IV subcell, the tunnel junction interconnecting the first group IV subcell to the second group-IV subcell, the first group IV subcell and the second group IV subcell being a lowest two subcells of the photovoltaic cell, the first group IV subcell being between the second group-IV subcell and a plurality of HI-V subcells.

The present disclosure relates to the field of solar cells, and provides a solar cell and a method for fabricating the same, which can at least solve the problem of poor performance of segmented cells. The solar cell includes: a first surface, a second surface, and a third surface connecting the first surface and the second surface, where the first surface is a front surface of the solar cell, and the second surface is a rear surface of the solar cell; at least one electrode structure disposed on at least one of the first surface or the second surface; a passivation region, where the passivation region is formed on the third surface; a silicon oxide layer, where the silicon oxide layer is formed on a surface of the passivation region; and a metal oxide layer, where the metal oxide layer is formed on the silicon oxide layer.

The present disclosure relates to the field of solar cells, and provides a solar cell and a method for fabricating the same, which can at least solve the problem of poor performance of segmented cells. The solar cell includes: a first surface, a second surface, and a third surface connecting the first surface and the second surface, where the first surface is a front surface of the solar cell, and the second surface is a rear surface of the solar cell; at least one electrode structure disposed on at least one of the first surface or the second surface; a passivation region, where the passivation region is formed on the third surface; a silicon oxide layer, where the silicon oxide layer is formed on a surface of the passivation region; and a metal oxide layer, where the metal oxide layer is formed on the silicon oxide layer.

Provided are an interdigitated back contact solar cell (10, a, b, c), comprising a monocrystalline, n-doped wafer (101), a first contact area (40) which is formed by a first stack on the surface of said monocrystalline wafer (101), said first stack comprising a thin silicon oxide layer (201) and a highly n-doped polycrystalline silicon layer (301), and a second contact area (20) which is formed by a second stack on the same surface of said monocrystalline wafer (101) as said first stack, said second stack comprising a thin silicon oxide layer (202) and a highly p-doped polycrystalline silicon layer (701), wherein a p-doped monocrystalline silicon region (801) is located in a gap (30) between said first contact area (40) and said second contact area (20) and a method for producing such an interdigitated back contact solar cell (10, a, b, c).

Provided are an interdigitated back contact solar cell (10, a, b, c), comprising a monocrystalline, n-doped wafer (101), a first contact area (40) which is formed by a first stack on the surface of said monocrystalline wafer (101), said first stack comprising a thin silicon oxide layer (201) and a highly n-doped polycrystalline silicon layer (301), and a second contact area (20) which is formed by a second stack on the same surface of said monocrystalline wafer (101) as said first stack, said second stack comprising a thin silicon oxide layer (202) and a highly p-doped polycrystalline silicon layer (701), wherein a p-doped monocrystalline silicon region (801) is located in a gap (30) between said first contact area (40) and said second contact area (20) and a method for producing such an interdigitated back contact solar cell (10, a, b, c).