A optical sensing device includes a substrate, an optical acting area and a filter layer. The optical acting area is disposed on the substrate. The filter layer covers the optical acting area and selectively allows only a light beam with a specific wavelength to pass through and be received by the optical acting area while blocking the light beams with other wavelengths. Each of the two sides of the substrate has a bevel structure. The filter layer covers each bevel structure of each side to prevent the light beams with other wavelengths from passing through the two sides of the substrate being received by the optical acting area.

A photodetector may include an absorption region that is formed to have an increasing depth (or thickness) in a direction that is approximately parallel to the direction of incident light that is to be projected onto the absorption region. The increasing depth of the absorption region in the direction that is approximately parallel with the direction of incident light enables the incident light to be more uniformly distributed along the length of the absorption region in the direction that is approximately parallel with the direction of incident light. This reduces the likelihood that a particular area of the absorption region reaches optical saturation, which may enable the photodetector to operate a sustained high photodetector sensitivity and/or a sustained high light detection performance, among other examples.

An optical semiconductor device includes: a first semiconductor layer having a first bandgap; and a second semiconductor layer having a second bandgap that is smaller than the first bandgap and formed on the first semiconductor layer. The first semiconductor layer includes a first conductive region with a first polarity, a second conductive region with a second polarity, and a first non-conductive region provided between the first conductive region and the second conductive region. The second semiconductor layer includes a third conductive region with the first polarity, and a second non-conductive region. The third conductive region is in contact with the first conductive region and the first non-conductive region. The second non-conductive region is in contact with at least one of the second conductive region and the first non-conductive region without being in contact with the first conductive region.

A method for fabricating solar cell module, comprising: dividing mother solar cell into solar cells by irradiating laser; the solar cells have long axis and short axis, and include first electrode on front surface and second electrode on back surface, disposing the solar cells along first direction; and connecting wiring members to first electrode of first solar cell and second electrode of second solar cell adjacent to the first solar cell, each of solar cell includes first side surface of one side in the first direction, second side surface having larger surface roughness than the first side surface on the other side, and protrusion formed adjacent to the second side surface on the back surface, and the first solar cell and the second solar cell are disposed with a gap of 0.5 mm to 1.5 mm with first side surface of second solar cell facing second side surface of first solar cell.

The invention provides a method for increasing the usable surface area of a semiconductor wafer having a substantially planar surface and a thickness dimension at right angles to said substantially planar surface, the method including the steps of selecting a strip thickness for division of the wafer into a plurality of strips, selecting a technique for cutting the wafer into the strips at an angle to the substantially planar surface, in which the combined strip thickness and width of wafer removed by the cutting is less than the thickness of the wafer, cutting the wafer into strips using the selected technique and separating the strips from each other.

An apparatus comprising a plurality of solar cells that each comprise a nanowire titanium oxide core having graphene disposed thereon. By one approach this plurality of solar cells can comprise, at least in part, a titanium foil having the plurality of solar cells disposed thereon wherein at least a majority of the solar cells are aligned substantially parallel to one another and substantially perpendicular to the titanium foil. Such a plurality of solar cells can be disposed between a source of light and another modality of solar energy conversion such that both the solar cells and the another modality of solar energy conversion generate electricity using a same source of light.

Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 610.sup.17 atoms/cc, preferably less than 210.sup.17, total oxygen less than 8.7510.sup.17 atoms/cc, preferably less than 5.2510.sup.17. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

A versatile silicone resin reflective substrate which exhibits high reflectance of high luminance light from an LED light source over a wide wavelength from short wavelengths of approximately 340-500 nm, which include wavelengths from 380-400 nm near lower limit of the visible region, to longer wavelength in the infra-red region. The silicone resin reflective substrate has a reflective layer which contains a white inorganic filler powder dispersed in a three-dimensional cross linked silicone resin, the inorganic filler powder having a high reflective index than the silicone resin. The reflective layer is formed on a support body as a film, a solid, or a sheet. The silicone resin reflective substrate can be easily formed as a wiring substrate, a packaging case or the like, and can be manufactured at low cost and a high rate of production.

The present invention pertains to a semiconductor light-receiving element and a method for manufacturing the same, enabling operation in a wide wavelength bandwidth and achieving fast response and high response efficiency. A PIN type photodiode made by sequentially layering on top of the substrate a Si layer of a first conductivity type, a non-doped Ge layer and a Ge layer of a second conductivity type that is the opposite type of the first conductivity type and a Ge current-blocking mechanism is provided in at least part of the periphery of the PIN type photodiode.

An apparatus and method for optical-power-transfer (OPT). A light source converts electrical energy into light, and the light is transmitted from the active layer of the light source directly to the active layers of a series of photovoltaic (PV) devices without first passing through a conduction layer of the PV device. Thus, absorption in the conduction layer is avoided, and the efficiency of the OPT system is improved. The PV devices are configured to each generate equal current, and the PV devices are electrically connected in series. PV devices are arranged in series with light first propagating through PV devices closer to the light source, and farther PV devices having a longer propagation length, such that the light absorbed and current generated by each PV device is equal to the other PV devices. In one implementation, the PV devices are configured in a laser cavity with the light source.