A waveguide assembly integrated with a semiconductor wafer is provided. The waveguide assembly includes a waveguide channel defined by internal walls of the wafer lined with a metallic layer, and having at least one port for transmission of the RF signal into or out of the waveguide channel. The waveguide assembly also includes a semiconductor obstacle member disposed in the waveguide channel. The waveguide assembly may be fabricated using etching and deposition processes for semiconductor devices. In use, selectively varying either one or both of frequency or power level of electromagnetic radiation applied to the obstacle member varies electrical conductance of the obstacle member, and thereby varies the electrical impedance of the obstacle member to transmission of the RF signal through the waveguide channel. The waveguide assembly may be used for switching, attenuating, routing, filtering, and transforming the RF signal.

A light receiving element includes a first semiconductor layer having a first conductivity type, a light absorbing layer stacked above the first semiconductor layer, a second semiconductor layer stacked above the light absorbing layer and having a second conductivity type, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, a first insulating film, and a light shielding film provided on or above the first insulating film. A light receiving region is formed at a portion overlapping the light absorbing layer, the first insulating film is configured to cover a periphery of the light receiving region, and the light shielding film is configured to cover the periphery of the light receiving region and has a light transmittance lower than a light transmittance of the first insulating film.

Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes: a substrate having a front surface and a rear surface, a first doped polycrystalline silicon layer doped with N-type dopant ions and disposed over the front surface or over the rear surface, and a second doped polycrystalline silicon layer doped with P-type dopant ions and disposed over the rear surface. A surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures. A surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures. An average thickness of the first protrusion structures is greater than an average thickness of the second protrusion structures, and a thickness of the first doped polycrystalline silicon layer is not greater than a thickness of the second doped polycrystalline silicon layer.

The present disclosure provides a back contact solar cell and a manufacturing method therefor, and a photovoltaic module, In one example, a back contact solar cell includes a semiconductor substrate, a transparent conductive layer, and an isolating protective structure. The semiconductor substrate includes a first surface and a second surface opposite to the first surface. The second surface includes N-type regions and P-type regions alternately distributed at intervals, and an isolating region between each of the N-type regions and a corresponding P-type region. The transparent conductive layer covers the second surface. An isolating groove extending through at least the transparent conductive layer is formed on each isolating region The isolating protective structure is formed on a partial region of a groove bottom of the isolating groove. The isolating protective structure includes at least a material of the transparent conductive layer.

The invention relates to the technical field of solar cells, in particular to a three-dimensional framework silicon/perovskite tandem solar cell and its preparation method. The three-dimensional framework silicon/perovskite tandem solar cell comprises a formal structure or a trans structure; a p-type amorphous silicon layer, a top electrode light-transmitting layer, an n-type transmission layer, a perovskite thin film, a p-type transmission layer, a buffer layer and a transparent electrode which are sequentially laminated on a substrate from bottom to top; when it is in a trans structure, it comprises a p-type silicon nanowire, an i-type intrinsic amorphous silicon layer, an n-type amorphous silicon layer, a top electrode light-transmitting layer, a p-type transmission layer, a perovskite thin film. The present invention can improve the absorption efficiency of the cell for incident light, broaden the absorption spectrum, and further improve the photoelectric conversion efficiency of the solar cell.

A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.

Structures including a photonic device with thermal isolation and related methods. The structure comprises a semiconductor substrate including a first cavity, a second cavity, and a wall between the first cavity and the second cavity. The structure further comprises a photonic device over the first cavity, the second cavity, and the wall, and a dielectric layer between the photonic device and the wall of the semiconductor substrate.

The present disclosure provides a method of manufacturing a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

Translucent photovoltaic product, method of manufacturing the same and manufacturing apparatus. The method comprises: depositing a stack of layers on a carrier substrate, the stack comprising a first electrode layer, a photovoltaic layer and a second electrode layer; cutting through the substrate with the stack of layers to form a first and a second mutually disjoint sections; separating the first and the second section from each other; laminating the first section and the second section with a respective further substrate at a side opposite the carrier substrate to form a respective first and second photovoltaic device; and assembling the photovoltaic product from the first photovoltaic device and the second photovoltaic device, wherein the first and the second sections are mutually complementary comb shaped structures and wherein the second photovoltaic device is arranged in a second plane parallel to and in front of a first plane of said first photovoltaic device.

A string of solar cells is disclosed. The sides of the solar cells have a corrugated shape which forms an opening when the solar cells are arranged in a shingled manner. The solar cells are electrically connected in series by a ribbon that passes through the opening. A wire mesh used to decrease solar cell resistance is also disclosed.