In some embodiments, the present disclosure relates to a semiconductor device, including a substrate including a first semiconductor material and a semiconductor layer extending into an upper surface of the substrate and including a second semiconductor material with a different band gap than the first semiconductor material. The semiconductor device also includes a passive cap including a first dielectric material and disposed along the upper surface of the substrate and on opposite sides of the semiconductor layer, and a photodetector in the semiconductor layer. The first dielectric material includes silicon nitride.

The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction. The present invention relates to a micro nano structure sensitive to a laser beam in a specific direction. The micro nano structure comprises a substrate, wherein an insulating layer is fixedly arranged on the substrate; and two silicon wires, which are parallel to each other and are in the same shape and size, are arranged on the insulating layer, and wires are led out from two ends of each silicon wire and are connected to potential meters. When laser light irradiates the silicon wires, a near field coupling effect is generated between the silicon wires and the substrate; and one silicon wire close to a laser light source is completely inhibited, and the other silicon wire far away from the laser light source maintains the brightness thereof. By means of present invention, a laser signal at a certain specific angle can be accurately detected, and non contact signal transmission can be carried out in a specific direction.

Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overlies the curved upper surface of the germanium photodiode region. There is an absence of oxide between the curved upper surface of the germanium photodiode region and an upper surface of the silicon cap.

A photovoltaic module and a method for manufacturing the photovoltaic module are provided. The photovoltaic module includes a battery module including multiple cell string groups and multiple first connection structures. Each cell string group includes multiple cell strings arranged along a first direction. Each cell string includes multiple solar cells and multiple second connection structures. Each solar cell includes multiple first grid lines and multiple second grid lines. There is a distance L between a first grid line and a second grid line adjacent to the first grid line in the first direction. A second connection structure connected to an end of a respective middle first connection structure is spaced apart by a distance S in the first direction from an adjacent second connection structure connected to an end of another middle first connection structure adjacent to the respective middle first connection structure and the distance S is greater than the distance L.

Provided is an optical detection device that includes a light-receiving waveguide and a light-receiving unit. The light-receiving waveguide is connected to a first input waveguide to which a first optical signal is input and a second input waveguide to which a second optical signal is input. The light-receiving unit is configured to output an electrical signal corresponding to an intensity of a signal obtained by combining the first optical signal and the second optical signal input to the light-receiving waveguide. The light-receiving unit is configured to reduce an intensity of an optical signal returning in an opposite direction from a first direction in which the first optical signal propagates in the first input waveguide, and an intensity of an optical signal returning in an opposite direction from a second direction in which the second optical signal propagates in the second input waveguide.

Provided are a panel and a method for preparing the same, and a photovoltaic module. The panel includes a visual board and a coating. The visual board includes a plurality of coated regions arranged in an array and non-coated regions defined by the plurality of coated regions. The coating is applied on cach of the plurality of coated regions.

A light receiving device includes a first light-receiving element and a second light-receiving element, each including a semiconductor substrate including a light receiving region, and a support substrate including a supporting surface supporting the first light-receiving element and the second light-receiving element. The semiconductor substrate of the first or second light-receiving element includes a main surface including the light receiving region, a back surface on an opposite side of the main surface in a perpendicular direction, and a recess sunk from the back surface towards the main surface. The other semiconductor substrate of the first light-receiving element or second light-receiving element is disposed inside the recess. An angle formed between a side surface of the recess and the supporting surface is 75 or greater and 105 or less, where the side surface is continuous from an opening edge of the recess to a bottom surface of the recess.

Disclosed are a solar cell and a photovoltaic module. In the solar cell, first and second conductive doped portions are arranged in an edge region of a first surface of a substrate. Each first conductive doped portion includes a first doped portion and second doped portions disposed on two opposite sides of the first doped portion, and a dopant concentration of the first doped portion is greater than that of the second doped portions. A passivation layer is disposed on the first surface. The second edge fingers are disposed on the second conductive doped portions respectively. Each first edge finger includes a first sub-finger and a second sub-finger, disposed on the second doped portions respectively. The second sub-finger is connected to the first sub-finger via the first doped portion. An edge busbar disposed on the passivation layer and on the first doped portion is connected to the second edge fingers.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a planar germanium photodetector that includes n-type and p-type amorphous silicon deposits on a germanium slab. During operation, a uniform electrical field is formed across the germanium bulk between the amorphous silicon deposits. Other embodiments may be described and/or claimed.

A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.