A solar cell device includes a supporting substrate, and an epitaxial active structure that is disposed on the supporting substrate. The epitaxial active structure has a bottom surface adjacent to the supporting substrate and a top surface opposite to the bottom surface, and is formed with an isolation section that extends from the top surface to the bottom surface. A method for producing the solar cell device is also disclosed.

A back-contact solar cell, a battery assembly and a photovoltaic system. In the back-contact solar cell, several grooves arranged at intervals are formed in a back surface of a silicon wafer, so as to divide the back surface of the silicon wafer into several first regions and second regions that are alternately arranged in sequence, in an arrangement direction of the first regions and the second regions, the silicon wafer is provided on the first regions and the edges of the grooves with extension portions that extrude to the upper side of the grooves, and second polarity doping layers are disposed on second tunneling layers in a stacked manner and have a preset distance with the edges of the grooves.

Solar cell and photovoltaic module. Solar cell includes: semiconductor substrate, first passivation layer, and second passivation layer. Semiconductor substrate includes front surface and back surface opposite to each other. Back surface of semiconductor substrate has alternated N-type conductive regions and P-type conductive regions. First passivation layer is disposed on side of P-type conductive region facing away from semiconductor substrate. Length of first passivation layer along first direction is greater than length of P-type conductive region along first direction. Second passivation layer is disposed on side of N-type conductive region facing away from semiconductor substrate. Length of second passivation layer along first direction is smaller than length of N-type conductive region along first direction, first direction is parallel to plane of semiconductor substrate. Solar cell improves light utilization rate on backlight side of solar cell while reducing parasitic absorption of solar cell, thereby improving photoelectric conversion efficiency of solar cell.

Provided is an infrared optical device that is easy to produce and has high performance. The infrared optical device having a peak at a center wavelength includes: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer, an active layer, a p-type semiconductor layer, and a first electrode layer formed on the semiconductor substrate in stated order. The first reflecting layer and the p-type semiconductor layer are directly connected to the active layer. The first reflecting layer is constructed through layering of a low-refractive-index layer that is an n-type semiconductor layer and a high-refractive-index layer. The low-refractive-index layer is placed closest to the active layer in the first reflecting layer. The active layer and the p-type semiconductor layer each have a higher refractive index than the low-refractive-index layer. The center wavelength is 7 m or more at room temperature.

A layered textile energy storage device can include first and second encasing layers, an anode, a cathode, and a flexible separator layer. The first and second encasing layers can each include a nylon fabric coated with a polyurethane. The anode can include a carbon fabric coated with anode active material, carbon nanotubes, and a binder material. The cathode can include a carbon fabric coated with cathode active material, carbon nanotubes, and a binder material. The flexible separator layer can be disposed between the anode and cathode to prevent internal shorting of the layered textile energy storage device. The anode, the cathode and the flexible separator layer can be disposed between the first and the second encasing layers.

A photovoltaic module and a method for manufacturing the photovoltaic module are provided. The photovoltaic module includes a cell module including multiple cell string groups and multiple first connection structures. Each cell string group includes multiple cell strings arranged along a first direction. Each cell string includes multiple solar cells and multiple second connection structures. Second connection structures located on a corresponding solar cell include third connection structures interleaved with fourth connection structures, and each third connection structure is spaced from an adjacent fourth connection structure by a distance L in the first direction. A second connection structure connected to an end of a respective end first connection structure is spaced apart by a distance N in the first direction from an adjacent second connection structure connected to an end of another end first connection structure, and the distance N is less than twice the distance L.

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

An image sensor and a method for forming the image sensor are provided. The method includes: providing a substrate; patterning the substrate to form a plurality of columnar structures configured in an array, wherein a first trench, a second trench, and a third trench are configured between adjacent columnar structures and respectively along a first direction, a second direction, and a third direction, side walls of the columnar structures perpendicular to the first direction are (110) crystal faces, and oblique sections of the columnar structures perpendicular to the third direction are (100) crystal faces; and forming a doped epitaxial layer in the first trench, the second trench and the cross trench. Therefore, for the image sensor, an upper part of the cross trench is improved with little defects after the cross trench is full filled, which can effectively reduce white pixels and thus improve the performance of the image sensor.

A solar module includes a plurality of solar cells and a carrier plate. The carrier plate includes a front cover and a back cover. The plurality of solar cells are welded and connected in series to define a plurality of solar battery string groups. The plurality of solar cells are connected in series at a predetermined spacing distance therebetween in a first direction to form each of the plurality of solar battery string groups. A width of each of the plurality of solar cells in the first direction is a first length, a length of each of the plurality of solar cells in a second direction is a second length, and a ratio of the second length to the first length is greater than 10. The plurality of solar battery string groups are pressed between the front cover and the back cover via a plurality of bus strips.

An optoelectronic device can include a first semiconductor layer with a mesa located on a portion of a surface thereof. The mesa can include an active region and a second semiconductor layer having a different conductivity than the first semiconductor layer. A contact can be located adjacent to the first semiconductor layer and the first semiconductor layer can be configured to distribute current flow away from a side of the mesa on which the contact is located. The first semiconductor layer can include a plurality of polarization doped channel layers.