A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

A lighting system can include a lightguide having an edge and two major surfaces. The lightguide can be mounted in a frame so that one of the major surfaces faces towards an area to be illuminated, while the other major surface faces away from the area. LEDs can couple light into the lightguide edge, with the coupled light emitting from both major surfaces. Light emitted from the major surface that faces away from the area to be illuminated can be reflected back into the lightguide by a reflective surface. The reflective surface can be separated from the lightguide by an air gap. The air gap can promote internal reflection at the major surface facing away from the area to be illuminated, thereby enhancing homogeneity and output of light towards the area to be illuminated. The frame can include integral wireways, reflector retention clips, and grounding circuitry.

The invention provides hybrid photovoltaic-piezoelectric energy harvesting devices in the form of flexible filaments. The devices harvest energy from ambient light, and also from environmental motions and vibrations. They are particularly suitable for incorporation into fabrics and clothing.

A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

A semiconductor light receiving device includes a substrate, a semiconductor fine line waveguide provided on the substrate, and a light receiving circuit that is provided on the substrate and that absorbs light propagating through the semiconductor fine line waveguide. The light receiving circuit includes a p type first semiconductor layer, a number of second semiconductor mesa structures provided on the p type first semiconductor layer in such a manner that an n type second semiconductor layer is provided on top of an i type second semiconductor layer, a p side electrode connected to the p type first semiconductor layer in a location between the second semiconductor mesa structures, and an n side electrode connected to the n type second semiconductor layer. The refractive index and the optical absorption coefficient of the second semiconductor layers are greater than the refractive index and the optical absorption coefficient of the first semiconductor layer.

After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

A photovoltaic cell mounting substrate includes a substrate; and a plurality of grooves provided at one surface of the photovoltaic cell mounting substrate, the plurality of grooves including a first groove and a second groove that is placed at a circumferential side of the first groove, at the one surface of the substrate, the second groove being formed deeper than the first groove, with respect to the one surface of the substrate.

A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.