Disclosed is a solar cell including a semiconductor substrate including a semiconductor material, a tunneling layer disposed over one surface of the semiconductor substrate, a first conductive area and a second conductive area disposed over the tunneling layer and having opposite conductive types, and an electrode including a first electrode electrically connected to the first conductive area and a second electrode electrically connected to the second conductive area. At least one of the first conductive area and the second conductive area is configured as a metal compound layer.

A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.

Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.

A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

In the solar cell module including a plurality of solar cells interconnected with wiring members, each of the solar cells includes a plurality of front-side finger electrodes that are disposed on a light-receiving surface of the solar cell and connected with tabs and a plurality of rear-side finger electrodes that are disposed on a rear surface of the solar cell and connected with tabs. Rear-side auxiliary electrode sections are arranged in regions, which is wider than the front-side finger electrodes, on the rear surface opposite to regions where the front-side finger electrodes are present.

A solar cell module is discussed. The solar cell module includes a plurality of solar cells each including a plurality of first current collectors and a plurality of second current collectors, a first protective layer positioned on incident surfaces of the solar cells, a transparent member positioned on the first protective layer, and a conductive pattern part positioned on non-incident surfaces of the plurality of solar cells. The conductive pattern part includes a first pattern having a plurality of first protrusions connected to first current collectors of one solar cell and a second pattern having a plurality of second protrusions connected to second current collectors of the one solar cell. The plurality of first current collectors and the plurality of second current collectors are positioned on a surface of each solar cell on which light is not incident.

A solar module is provided which has improved durability. A third wiring member (32a) includes a first portion (32a1), a second portion (32a2), and a third portion (32a3). In the first portion (32a1), metal foil (52) faces a solar cell (20). The first portion (32a1) is electrically connected to the solar cell (20). The second portion (32a2) is arranged on the solar cell (20) with the metal foil (52) facing the side opposite to the solar cell (20). The third portion (32a3) connects the first portion (32a1) and the second portion (32a2). A first wiring member (32b) electrically connects the second portions (32a2) of adjacent solar cell strings (10) to each other. The solar module (1) also includes an insulating sheet (60). The insulating sheet (60) is arranged between the first wiring member (32b) and the solar cell (20).

A solar cell is discussed. The solar cell includes a silicon substrate; a front passivation layer positioned on a front surface of the silicon substrate; an n-doped layer positioned on the front surface of the silicon substrate; an anti-reflection layer positioned on the n-doped layer; a p-doped region positioned on a rear surface of the silicon substrate; an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region; a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including: a first portion positioned between the p-doped region and the silicon substrate; a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and a third portion disposed between the first portion and the second portion; a first electrode directly contacted to the p-doped region; and a second electrode directly contacted to the n-doped region.

A high efficiency configuration for a string of solar cells comprises series-connected solar cells arranged in an overlapping shingle pattern. Front and back surface metallization patterns may provide further increases in efficiency.

A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.