The present disclosure provides a non-solder pad ultrafine main busbar back-contact solar cell, a back-contact solar cell module, and a preparation method, wherein the back-contact cell includes a first finger and a second finger, a first main busbar line, a second finger, a first insulation layer, and a second insulation layer, wherein the widths of the first main busbar line and the second main busbar line in the X-axis direction are each independently 10-100 m; the first main busbar lines or the second main busbar lines are respectively provided in an extending manner or at intervals along the same axis perpendicular to the corresponding fingers connected thereto, and when spaced apart, the distance L between two adjacent corresponding main busbar lines in the Y-axis direction is 5-100 mm.

The present disclosure discloses an electrode structure of a solar cell, which belongs to the technical field of Photovoltaic (PV) cells and includes a conducting layer, and one end, configured to be connected to the solar cell, of the conducting layer is provided with a seed layer, and a width of the seed layer is less than that of the conducting layer. The present disclosure also discloses the solar cell, a cell module and a power generation system applying the electrode structure.

A solar cell structure comprises a substrate including a front side and a back side. A first tunnel oxide layer, a first polycrystalline silicon layer, a first silicon nitride layer, and a plurality of first electrodes are sequentially formed on the front side of the substrate. A second tunnel oxide layer, a second polycrystalline silicon layer, a second silicon nitride layer, and a plurality of second electrodes are sequentially formed on the back side of the substrate.

The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

Methods are provided for fabricating photovoltaic cell contacts, which include: providing a block copolymer layer above an electrical contact layer of the photovoltaic cell, the block copolymer layer being self-assembled by phase segregation to include multiple structures of a first polymer material surrounded, at least in part, by a second polymer material; selectively etching the block copolymer layer to remove the multiple structures, forming holes in the block copolymer layer; and using the holes in the block copolymer layer to facilitate providing electrical contacts between a light absorption layer of the photovoltaic cell and the electrical contact layer. For instance, the holes in the copolymer layer may be used in etching a passivation layer over the electrical contact layer to form nano-sized contact openings in the passivation layer to the contact layer. Once provided, the cell's light absorption material forms contacts extending through the contact openings in the passivation layer.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.