Patent classifications
H10F77/219
Fast process flow, on-wafer interconnection and singulation for MEPV
A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.
Method for manufacturing back-contact solar cell and back-contact solar cell
A method for manufacturing a back-contact solar cell and a back-contact solar cell are provided. The method includes the following. A substrate having a first surface is provided, where the first surface includes first regions and second regions that are alternatingly arranged in a preset direction. First doping layers are formed over the first regions, second doping layers having different conductivity types of the first doping layers are formed over the second regions, and a mask layer is formed on the first doping layers. The respective second doping layer includes two first portions and a second portion arranged in the preset direction, the first portion is abutted on the respective first doping layer.
Non-solder pad ultrafine main busbar back-contact solar cell, back-contact solar cell module and preparation method thereof
The present disclosure provides a non-solder pad ultrafine main busbar back-contact solar cell, a back-contact solar cell module, and a preparation method, wherein the back-contact cell includes a first finger and a second finger, a first main busbar line, a second finger, a first insulation layer, and a second insulation layer, wherein the widths of the first main busbar line and the second main busbar line in the X-axis direction are each independently 10-100 m; the first main busbar lines or the second main busbar lines are respectively provided in an extending manner or at intervals along the same axis perpendicular to the corresponding fingers connected thereto, and when spaced apart, the distance L between two adjacent corresponding main busbar lines in the Y-axis direction is 5-100 mm.
Solar cell module and method for manufacturing the same
A method for manufacturing a solar cell module includes a cell forming operation of forming a plurality of first and second electrodes on a back surface of a semiconductor substrate to form each a plurality of solar cells, and a tabbing operation including at least one of a connection operation of performing a thermal process to respectively connect a first conductive line and a second conductive line to the first electrodes and the second electrodes of each solar cell using a conductive adhesive and an optional string forming operation of performing a thermal process to connect the first conductive line included in one solar cell and the second conductive line included in other solar cell adjacent to the one solar cell to an interconnect. The tabbing operation includes at least two thermal processes each having a different maximum temperature.
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate; an anti-reflection layer on the first passivation layer; a second passivation layer on a second surface of the substrate; an emitter region on the second passivation layer, the emitter region forming a p-n junction and a hetero-junction junction with the substrate; a second field region on the second passivation layer, the second field region forming a hetero-junction with the substrate; a first electrode contacted to the emitter region; a second electrode contacted to the second field region; a spacing between the emitter region and the second field region; and a third passivation layer on the second surface of the substrate at the spacing.
METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH SELECTIVE DOPING
A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.
BACK-CONTACT SI THIN-FILM SOLAR CELL
A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 m formed on a glass substrate; at least one coating layer intended for optical coating and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.
THICK DAMAGE BUFFER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.
SOLAR CELL AND SOLAR CELL MODULE
A solar cell and a solar cell module are disclosed. The solar cell includes a semiconductor substrate, an emitter region extending in a first direction, a back surface field region extending in the first direction in parallel with the emitter region, a first electrode connected to the emitter region and extending in the first direction, and a second electrode connected to the back surface field region and extending in the first direction. The first electrode has different linewidths at two positions that are separated from each other in the first direction. The second electrode has different linewidths at two positions that are separated from each other in the first direction. A linewidth of the first electrode and a linewidth of the second electrode are different from each other at two positions that are separated from each other in a second direction crossing the first direction.
Solar cell having doped semiconductor heterojunction contacts
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.