This disclosure provides a back contact solar cell and a method for manufacturing a back contact solar cell. In one example, a back contact solar cell includes a silicon substrate having first regions and second regions alternately distributed on a back surface of the silicon substrate, and a first doped semiconductor layer formed on a first region on the back surface of the silicon substrate. A groove structure concaving inward the silicon substrate relative to a surface of the first region is formed on a second region. An end portion of the first doped semiconductor layer adjacent to the second region is arranged in a suspended manner.

Described herein are perovskite ink solutions comprising a composition of Formula I (APbI.sub.3-zBr.sub.z), a tribromide salt, and a solvent, wherein z is defined herein. Further described are perovskite films prepared using the ink solutions, methods for preparing the perovskite films, and use of the films in wide band gap single junction and tandem solar cells. As shown herein, solar cells fabricated using the perovskite films prepared from ink solutions comprising a tribromide salt achieve enhanced efficiency compared to solar cells comprising a perovskite film prepared without the tribromide salt.

A functional device includes in succession: a first protective film on the front face of the device, with Young's modulus (YM) E1 and thermal dilatation coefficient (TDC) CTE1, a first exterior encapsulation film, with YM E2 and TDC CTE2, an interior encapsulation film, with YM E3 and TDC CTE3, a second exterior encapsulation film, with YM E4 and TDC CTE4, a second plate on the rear face of the device, with YM E5 and TDC CTE5, E1 and E5 being similar or identical, E2 and E4 being similar or identical, E1>E2 and E4<E5, CTE1 and CTE5 being similar or identical, CTE2 and CTE4 being similar or identical, CTE1<CTE2 and CTE4>CTE5, and one film of the first exterior encapsulation film, the interior encapsulation film and the second exterior encapsulation film encapsulating the active elements; and method for producing a functional traversable surface.

A metal-semiconductor contact structure is provided. The metal-semiconductor contact structure includes a doped silicon-based semiconductor layer and a metal electrode in contact with each other. A contact region between the doped silicon-based semiconductor layer and the metal electrode includes a first conductive region and a second conductive region. In the first conductive region, the metal electrode is recessed towards an inner direction of the doped silicon-based semiconductor layer to form a pit island, a silicon-based eutectic in conductive connection with the doped silicon-based semiconductor layer is provided in the pit island, and a conductive crystal in conductive connection with the silicon-based eutectic is provided. A conductive aggregate including a glass phase material and metal conductive particles is provided in the second conductive region, and the metal conductive particles have a same kind of the metal element as the conductive crystal.

A solar cell, a method for manufacturing solar cell, and a photovoltaic module. The solar cell includes: a semiconductor substrate; a tunneling layer located over a rear surface of the semiconductor substrate; a hydrogen barrier layer located over a surface of the tunneling layer; a lightly doped conductive layer located over a surface of the hydrogen barrier layer; and grid-shaped doped conductive layers located on at least part of a surface of the lightly doped conductive layer, wherein each of the grid-shaped doped conductive layers includes a heavily doped conductive layer and a metal barrier layer that are stacked on one another.

The disclosure discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a front metal layer in an entire fashion on a front surface of a P-type silicon substrate; subjecting the entire front metal layer to a photoetching process to form a patterned front fine gate electrode; subjecting the tunnel silicon oxide layer and the N-type doped polysilicon layer in a region not covered by the front fine gate electrode to chemical etching to form a local tunnel silicon oxide layer and a local N-type doped polysilicon layer, wherein the widths of the local tunnel silicon oxide layer and the local N-type doped polysilicon layer are the same as the width of the front fine gate electrode. The preparation method may achieve an automatic and precise alignment of the front fine gate electrode with a local tunnel oxide passivated layer and a local polysilicon layer, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter while ensuring the efficiency of the solar cell.

Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.

The present application relates to a back-contact solar cell, a preparation method thereof, and a photovoltaic module. The back-contact solar cell includes a substrate, a first emitter structure disposed on a first surface of the substrate, and a second emitter structure disposed on the first surface of the substrate. The doping type of the first emitter structure is opposite to the doping type of the second emitter structure. The first emitter structure and the second emitter structure are alternately disposed and spaced apart from each other in a first preset direction. An insulative isolating groove is defined between the first emitter structure and the second emitter structure that are adjacent to each other. The back-contact solar cell further includes a marking structure disposed in the insulative isolating groove and spaced apart from both the first emitter structure and the second emitter structure.

A PV module configured for vertical mounting, in which at least one cover glass has an external textured surface. The pattern of such texture is a plurality of triangular prisms. The height of the prisms is directed either parallelly or perpendicularly, or obliquely relative to the PV module's long side. The apparatus utilizes the sunlight at around noontime, mostly reflected from the glass at the grazing angles by redirecting the sunlight towards the PV cells inside the PV module. The sunlight harvesting is significantly higher than for PV modules with a smooth external surface. A polymer coating on the glass may also provide the texture pattern.

Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one side of the semiconductor substrate. The area of the smooth surface area is greater than or equal to that of the textured surface area. A smooth surface area and a textured surface area adjacent to the smooth surface area are formed on at least one side of the semiconductor substrate, so that the transparent conductive film is located and only located on the smooth surface area. A grid line is formed on the side of the corresponding to the transparent conductive film facing away from the semiconductor substrate, thereby improving the photovoltaic conversion efficiency of the solar cell.